Quench rate enhancement in pulsed laser melting of Si by processing under water

A. Polman; W. Sinke; F. W. Saris; M. J. Uttormark; Michael O. Thompson

doi:10.1063/1.99408

Quench rate enhancement in pulsed laser melting of Si by processing under water

A. Polman
, W. Sinke
, F. W. Saris
, M. J. Uttormark
, Michael O. Thompson

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The thermal quench rate during pulsed laser heating of Si can be enhanced by immersing the sample in a liquid (e.g., water) during irradiation. The liquid in contact with the irradiated surface acts as an additional heat sink increasing the thermal quench rate. The heat transfer processes and phase transformations were studied in real time using transient optical reflectance and electrical conductance techniques. Measurements of the melting and solidification dynamics of the Si reveal that the quench rate may be enhanced by 30% for deep melts. The measurements also indicate that a steam or superheated water phase is formed near the Si surface during the laser pulse. The observed phenomena are analyzed in terms of standard heat flow.

Original language	English
Pages (from-to)	535-537
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	7
DOIs	https://doi.org/10.1063/1.99408
State	Published - 1988
Externally published	Yes

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10.1063/1.99408

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@article{b04e36fc0ab04446a9c7d67c080d8bb0,

title = "Quench rate enhancement in pulsed laser melting of Si by processing under water",

abstract = "The thermal quench rate during pulsed laser heating of Si can be enhanced by immersing the sample in a liquid (e.g., water) during irradiation. The liquid in contact with the irradiated surface acts as an additional heat sink increasing the thermal quench rate. The heat transfer processes and phase transformations were studied in real time using transient optical reflectance and electrical conductance techniques. Measurements of the melting and solidification dynamics of the Si reveal that the quench rate may be enhanced by 30\% for deep melts. The measurements also indicate that a steam or superheated water phase is formed near the Si surface during the laser pulse. The observed phenomena are analyzed in terms of standard heat flow.",

author = "A. Polman and W. Sinke and Saris, \{F. W.\} and Uttormark, \{M. J.\} and Thompson, \{Michael O.\}",

year = "1988",

doi = "10.1063/1.99408",

language = "English",

volume = "52",

pages = "535--537",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Quench rate enhancement in pulsed laser melting of Si by processing under water

AU - Polman, A.

AU - Sinke, W.

AU - Saris, F. W.

AU - Uttormark, M. J.

AU - Thompson, Michael O.

PY - 1988

Y1 - 1988

N2 - The thermal quench rate during pulsed laser heating of Si can be enhanced by immersing the sample in a liquid (e.g., water) during irradiation. The liquid in contact with the irradiated surface acts as an additional heat sink increasing the thermal quench rate. The heat transfer processes and phase transformations were studied in real time using transient optical reflectance and electrical conductance techniques. Measurements of the melting and solidification dynamics of the Si reveal that the quench rate may be enhanced by 30% for deep melts. The measurements also indicate that a steam or superheated water phase is formed near the Si surface during the laser pulse. The observed phenomena are analyzed in terms of standard heat flow.

AB - The thermal quench rate during pulsed laser heating of Si can be enhanced by immersing the sample in a liquid (e.g., water) during irradiation. The liquid in contact with the irradiated surface acts as an additional heat sink increasing the thermal quench rate. The heat transfer processes and phase transformations were studied in real time using transient optical reflectance and electrical conductance techniques. Measurements of the melting and solidification dynamics of the Si reveal that the quench rate may be enhanced by 30% for deep melts. The measurements also indicate that a steam or superheated water phase is formed near the Si surface during the laser pulse. The observed phenomena are analyzed in terms of standard heat flow.

UR - https://www.scopus.com/pages/publications/3242862821

U2 - 10.1063/1.99408

DO - 10.1063/1.99408

M3 - Article

AN - SCOPUS:3242862821

SN - 0003-6951

VL - 52

SP - 535

EP - 537

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Quench rate enhancement in pulsed laser melting of Si by processing under water

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