Abstract
Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys MoxW1− xS2 ySe2(1− y ) is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.
Original language | English |
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Article number | 1702457 |
Journal | Advanced Materials |
Volume | 29 |
Issue number | 35 |
DOIs | |
State | Published - Sep 20 2017 |
Funding
S.S., A.K., and J.A.H. contributed equally to this work. S.S. synthesized the material, A.K. did the DFT calculations, and J.A.H. did the high-resolution STEM imaging. B.I.Y., C.S.T., and P.M.A. supervised the project. V.K., R.V., and J.C.I. did the technical discussions. V.K. and A.A. did the low temperature PL and AFM measurements. This work was supported by the MURI ARO program, grant number W911NF-11-1-0362, by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. This work was partially funded by the Air Force Office of Scientific Research (AFOSR) Grant No. FA9550-14-1-0268. The theory/computations part of this work (AK and BIY) was supported by the US ARO Electronics Division grant W911NF-16-1-0255. Microscopy Research performed as part of a user proposal at Oak Ridge National Laboratory's Center for Nanophase Materials Sciences (CNMS), which is a U.S. Department of Energy, Office of Science User Facility.
Keywords
- 2D materials
- DFT calculations
- electron microscopy
- optical bandgap
- quaternary system