Quasi-epitaxial growth of BaTiS3 films

Mythili Surendran; Boyang Zhao; Guodong Ren; Shantanu Singh; Amir Avishai; Huandong Chen; Jae Kyung Han; Megumi Kawasaki; Rohan Mishra; Jayakanth Ravichandran

doi:10.1557/s43578-022-00776-y

Quasi-epitaxial growth of BaTiS₃ films

Mythili Surendran, Boyang Zhao, Guodong Ren, Shantanu Singh, Amir Avishai, Huandong Chen, Jae Kyung Han, Megumi Kawasaki, Rohan Mishra, Jayakanth Ravichandran

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band-gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications of these materials. We report growth of quasi-epitaxial thin films of quasi-one-dimensional hexagonal chalcogenide BaTiS₃ by pulsed laser deposition. Optimal growth conditions were identified by varying the substrate temperature and H₂S partial pressure and their effects on the film structure were examined. High-resolution thin film X-ray diffraction shows strong out-of-plane texture, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides. Graphical abstract: [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	3481-3490
Number of pages	10
Journal	Journal of Materials Research
Volume	37
Issue number	21
DOIs	https://doi.org/10.1557/s43578-022-00776-y
State	Published - Nov 14 2022
Externally published	Yes

Funding

This work was supported in part by the Army Research Office under Award No. W911NF-19-1-0137, an ARO MURI program with award no. W911NF-21-1-0327, the National Science Foundation of the United States under grant numbers DMR-2122070 and DMR-2122071, and an Air Force Office of Scientific Research grant no. FA9550-22-1-0117. STEM characterization was conducted at the Center for Nanophase Materials Sciences at Oak Ridge National Laboratory (ORNL), which is a Department of Energy (DOE) Office of Science User Facility, through a user project (G.D.R. and R.M.). The work of HPT processing at Oregon State University was supported by the National Science Foundation of the United States under Grant No. DMR-1810343. The authors gratefully acknowledge the use of facilities at the Core Center for Excellence in Nano Imaging at University of Southern California for the results reported in this manuscript.

Keywords

Epitaxy
Perovskites
Scanning transmission electron microscopy
Thin film

Access to Document

10.1557/s43578-022-00776-y

Cite this

@article{d766f9dac7034f0f80460f5f5fb67457,

title = "Quasi-epitaxial growth of BaTiS3 films",

abstract = "Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band-gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications of these materials. We report growth of quasi-epitaxial thin films of quasi-one-dimensional hexagonal chalcogenide BaTiS3 by pulsed laser deposition. Optimal growth conditions were identified by varying the substrate temperature and H2S partial pressure and their effects on the film structure were examined. High-resolution thin film X-ray diffraction shows strong out-of-plane texture, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides. Graphical abstract: [Figure not available: see fulltext.].",

keywords = "Epitaxy, Perovskites, Scanning transmission electron microscopy, Thin film",

author = "Mythili Surendran and Boyang Zhao and Guodong Ren and Shantanu Singh and Amir Avishai and Huandong Chen and Han, {Jae Kyung} and Megumi Kawasaki and Rohan Mishra and Jayakanth Ravichandran",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to The Materials Research Society.",

year = "2022",

month = nov,

day = "14",

doi = "10.1557/s43578-022-00776-y",

language = "English",

volume = "37",

pages = "3481--3490",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer",

number = "21",

}

TY - JOUR

T1 - Quasi-epitaxial growth of BaTiS3 films

AU - Surendran, Mythili

AU - Zhao, Boyang

AU - Ren, Guodong

AU - Singh, Shantanu

AU - Avishai, Amir

AU - Chen, Huandong

AU - Han, Jae Kyung

AU - Kawasaki, Megumi

AU - Mishra, Rohan

AU - Ravichandran, Jayakanth

PY - 2022/11/14

Y1 - 2022/11/14

N2 - Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band-gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications of these materials. We report growth of quasi-epitaxial thin films of quasi-one-dimensional hexagonal chalcogenide BaTiS3 by pulsed laser deposition. Optimal growth conditions were identified by varying the substrate temperature and H2S partial pressure and their effects on the film structure were examined. High-resolution thin film X-ray diffraction shows strong out-of-plane texture, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides. Graphical abstract: [Figure not available: see fulltext.].

AB - Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band-gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications of these materials. We report growth of quasi-epitaxial thin films of quasi-one-dimensional hexagonal chalcogenide BaTiS3 by pulsed laser deposition. Optimal growth conditions were identified by varying the substrate temperature and H2S partial pressure and their effects on the film structure were examined. High-resolution thin film X-ray diffraction shows strong out-of-plane texture, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides. Graphical abstract: [Figure not available: see fulltext.].

KW - Epitaxy

KW - Perovskites

KW - Scanning transmission electron microscopy

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=85140026375&partnerID=8YFLogxK

U2 - 10.1557/s43578-022-00776-y

DO - 10.1557/s43578-022-00776-y

M3 - Article

AN - SCOPUS:85140026375

SN - 0884-2914

VL - 37

SP - 3481

EP - 3490

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 21

ER -