Quantum Spin Hall Effects in Van der Waals Materials

  • Jian Tang
  • , Thomas Siyuan Ding
  • , Chengdong Wang
  • , Ning Mao
  • , Vsevolod Belosevich
  • , Yang Zhang
  • , Xiaofeng Qian
  • , Qiong Ma

Research output: Contribution to journalReview articlepeer-review

Abstract

The quantum spin Hall (QSH) effect, first predicted in graphene by Kane and Mele in 2004, has become a key platform for exploring spin–orbit coupling, topology, and electronic interactions. Initially demonstrated in quantum wells, the field has expanded with the emergence of van der Waals (vdW) materials. This review focuses on vdW systems, which provide unique advantages: exposed surfaces allow comprehensive spectroscopic and microscopic detection of the QSH state; mechanical stacking enables symmetry tuning and proximity effects; and moiré engineering introduces new topology and strong correlations. We highlight two monolayer families, 1T'-MX2 and (Formula presented.), represented by WTe2 and TaIrTe4, respectively, which host QSH phases in close proximity to other quantum states including excitonic insulators, charge density waves, and superconductivity. Their low symmetry and topology produce rich quantum geometrical responses, from nonlinear Hall to circular photogalvanic effects. We also discuss moiré systems that combine topology with flatband physics, enabling spontaneous symmetry breaking and transitions from QSH to quantum anomalous Hall (QAH) states. Recent observations of fractionalized QAH and QSH states mark a major advance in condensed matter physics. Finally, we outline potential applications, such as nonlinear Hall–based microwave rectification and fractional states for topological quantum computing.

Original languageEnglish
Article numbere00327
JournalAdvanced Quantum Technologies
Volume8
Issue number11
DOIs
StatePublished - Nov 2025

Funding

Q.M., J.T., and T.S.D. acknowledge support from the Air Force Office of Scientific Research (grants FA9550-22-1-0270 and FA9550-24-1-0117), the Office of Naval Research (grant N00014-24-1-2102), and the Alfred P. Sloan Foundation. V.B. acknowledges support from NSF ITE-2345084. C.W. and X.Q. gracefully acknowledge the support from the National Science Foundation under grants DMR-1753054 and DMR-2103842 and AFOSR FA9550-24-1-0207. N.M. and Y.Z. are supported by the Max Planck Partner lab on quantum materials, and the National Science Foundation Materials Research Science and Engineering Center program through the UT Knoxville Center for Advanced Materials and Manufacturing (DMR-2309083). Q.M., J.T., and T.S.D. acknowledge support from the Air Force Office of Scientific Research (grants FA9550‐22‐1‐0270 and FA9550‐24‐1‐0117), the Office of Naval Research (grant N00014‐24‐1‐2102), and the Alfred P. Sloan Foundation. V.B. acknowledges support from NSF ITE‐2345084. C.W. and X.Q. gracefully acknowledge the support from the National Science Foundation under grants DMR‐1753054 and DMR‐2103842 and AFOSR FA9550‐24‐1‐0207. N.M. and Y.Z. are supported by the Max Planck Partner lab on quantum materials, and the National Science Foundation Materials Research Science and Engineering Center program through the UT Knoxville Center for Advanced Materials and Manufacturing (DMR‐2309083).

Keywords

  • electron correlation phase
  • quantum spin hall effect
  • topological insulator
  • van der waals materials

Fingerprint

Dive into the research topics of 'Quantum Spin Hall Effects in Van der Waals Materials'. Together they form a unique fingerprint.

Cite this