Quantum confinement in oxide heterostructures: Room-temperature intersubband absorption in SrTiO3/LaAlO3 multiple quantum wells

J. Elliott Ortmann; Nishant Nookala; Qian He; Lingyuan Gao; Chungwei Lin; Agham B. Posadas; Albina Y. Borisevich; Mikhail A. Belkin; Alexander A. Demkov

doi:10.1021/acsnano.8b01293

Quantum confinement in oxide heterostructures: Room-temperature intersubband absorption in SrTiO₃/LaAlO₃ multiple quantum wells

J. Elliott Ortmann, Nishant Nookala, Qian He, Lingyuan Gao, Chungwei Lin, Agham B. Posadas, Albina Y. Borisevich, Mikhail A. Belkin, Alexander A. Demkov

electron Microscopy and Microanalysis

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The Si-compatibility of perovskite heterostructures offers the intriguing possibility of producing oxide-based quantum well (QW) optoelectronic devices for use in Si photonics. While the SrTiO₃/LaAlO₃ (STO/LAO) system has been studied extensively in the hopes of using the interfacial two-dimensional electron gas in Si-integrated electronics, the potential to exploit its giant 2.4 eV conduction band offset in oxide-based QW optoelectronic devices has so far been largely ignored. Here, we demonstrate room-temperature intersubband absorption in STO/LAO QW heterostructures at energies on the order of hundreds of meV, including at energies approaching the critically important telecom wavelength of 1.55 μm. We demonstrate the ability to control the absorption energy by changing the width of the STO well layers by a single unit cell and present theory showing good agreement with experiment. A detailed structural and chemical analysis of the samples via scanning transmission electron microscopy and electron energy loss spectroscopy is presented. This work represents an important proof-of-concept for the use of transition metal oxide QWs in Si-compatible optoelectronic devices.

Original language	English
Pages (from-to)	7682-7689
Number of pages	8
Journal	ACS Nano
Volume	12
Issue number	8
DOIs	https://doi.org/10.1021/acsnano.8b01293
State	Published - Aug 28 2018

Funding

The authors thank Rik Dey, Sarmita Majumder, and Sanjay Banerjee of the Microelectronics Research Center at the University of Texas at Austin for performing in-plane transport measurements. J.E.O. is grateful for the generous support of the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1610403. The work at the University of Texas is supported by the Air Force Office of Scientific Research under Grant FA9550-12-10494, through Scientific Discovery through Advanced Computing (SciDAC) program funded by U.S. Department of Energy, Office of Science, Advanced Scientific Computing Research and Basic Energy Sciences, under award number DESC0008877 and by the Texas Advanced Computing Center. Electron microscopy work (Q.H. and A.Y.B.) was supported by the U.S. Department of Energy (DOE) Office of Science, Office of Basic Energy Sciences (BES), Materials Science and Engineering Division.

Keywords

heterostructure
intersubband transitions
oxideâoxide interface
quantum wells
thin films
transition metal oxides

Access to Document

10.1021/acsnano.8b01293

Cite this

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title = "Quantum confinement in oxide heterostructures: Room-temperature intersubband absorption in SrTiO3/LaAlO3 multiple quantum wells",

abstract = "The Si-compatibility of perovskite heterostructures offers the intriguing possibility of producing oxide-based quantum well (QW) optoelectronic devices for use in Si photonics. While the SrTiO3/LaAlO3 (STO/LAO) system has been studied extensively in the hopes of using the interfacial two-dimensional electron gas in Si-integrated electronics, the potential to exploit its giant 2.4 eV conduction band offset in oxide-based QW optoelectronic devices has so far been largely ignored. Here, we demonstrate room-temperature intersubband absorption in STO/LAO QW heterostructures at energies on the order of hundreds of meV, including at energies approaching the critically important telecom wavelength of 1.55 μm. We demonstrate the ability to control the absorption energy by changing the width of the STO well layers by a single unit cell and present theory showing good agreement with experiment. A detailed structural and chemical analysis of the samples via scanning transmission electron microscopy and electron energy loss spectroscopy is presented. This work represents an important proof-of-concept for the use of transition metal oxide QWs in Si-compatible optoelectronic devices.",

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author = "Ortmann, {J. Elliott} and Nishant Nookala and Qian He and Lingyuan Gao and Chungwei Lin and Posadas, {Agham B.} and Borisevich, {Albina Y.} and Belkin, {Mikhail A.} and Demkov, {Alexander A.}",

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AU - Gao, Lingyuan

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AU - Posadas, Agham B.

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