Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism

Shishun Zhao; Ziyao Zhou; Bin Peng; Mingmin Zhu; Mengmeng Feng; Qu Yang; Yuan Yan; Wei Ren; Zuo Guang Ye; Yaohua Liu; Ming Liu

doi:10.1002/adma.201606478

Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism

Shishun Zhao, Ziyao Zhou, Bin Peng, Mingmin Zhu, Mengmeng Feng, Qu Yang, Yuan Yan, Wei Ren, Zuo Guang Ye, Yaohua Liu, Ming Liu

STS Project Technical Systems

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]⁺[TFSI]⁻/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V⁻¹. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.

Original language	English
Article number	1606478
Journal	Advanced Materials
Volume	29
Issue number	17
DOIs	https://doi.org/10.1002/adma.201606478
State	Published - May 3 2017

Funding

The work was supported by the Natural Science Foundation of China (Grant Nos. 51472199, 11534015, and 51602244), the Natural Science Foundation of Shaanxi Province (Grant No. 2015JM5196), the National 111 Project of China (B14040), the 973 Program (Grant No. 2015CB057402), and the Fundamental Research Funds for the Central Universities. The authors appreciate the support from the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies. Z.Z. and M.L. are supported by the China Recruitment Program of Global Youth Experts. The work at SFU was support by the Natural Science and Engineering Research Council of Canada (NSERC). Y.L. was supported by the Division of Scientific User Facilities of the Office of Basic Energy Sciences, US Department of Energy.

Funders	Funder number
Division of Scientific
U.S. Department of Energy
Basic Energy Sciences
Natural Sciences and Engineering Research Council of Canada
National Natural Science Foundation of China	51472199, 51602244, 11534015
Natural Science Foundation of Shaanxi Province	2015JM5196
National Key Research and Development Program of China	2015CB057402
Fundamental Research Funds for the Central Universities
International Joint Laboratory for MicroNano Manufacturing and Measurement Technologies
Higher Education Discipline Innovation Project	B14040

Keywords

ferromagnetic resonance
interfacial oxidation
ionic liquid gating
voltage control of magnetism

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10.1002/adma.201606478

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@article{116cbaeaf2644131a700deb2e4468cd6,

title = "Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism",

abstract = "Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]+[TFSI]−/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V−1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.",

keywords = "ferromagnetic resonance, interfacial oxidation, ionic liquid gating, voltage control of magnetism",

author = "Shishun Zhao and Ziyao Zhou and Bin Peng and Mingmin Zhu and Mengmeng Feng and Qu Yang and Yuan Yan and Wei Ren and Ye, {Zuo Guang} and Yaohua Liu and Ming Liu",

note = "Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2017",

month = may,

day = "3",

doi = "10.1002/adma.201606478",

language = "English",

volume = "29",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "wiley",

number = "17",

}

TY - JOUR

T1 - Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism

AU - Zhao, Shishun

AU - Zhou, Ziyao

AU - Peng, Bin

AU - Zhu, Mingmin

AU - Feng, Mengmeng

AU - Yang, Qu

AU - Yan, Yuan

AU - Ren, Wei

AU - Ye, Zuo Guang

AU - Liu, Yaohua

AU - Liu, Ming

PY - 2017/5/3

Y1 - 2017/5/3

N2 - Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]+[TFSI]−/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V−1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.

AB - Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]+[TFSI]−/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V−1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.

KW - ferromagnetic resonance

KW - interfacial oxidation

KW - ionic liquid gating

KW - voltage control of magnetism

UR - http://www.scopus.com/inward/record.url?scp=85014364369&partnerID=8YFLogxK

U2 - 10.1002/adma.201606478

DO - 10.1002/adma.201606478

M3 - Article

C2 - 28256772

AN - SCOPUS:85014364369

SN - 0935-9648

VL - 29

JO - Advanced Materials

JF - Advanced Materials

IS - 17

M1 - 1606478

ER -

Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism

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Keywords

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