Quantitative analysis of the nucleation and growth of ferroelectric domains in epitaxial Pb(Zr,Ti)O3 thin films

S. M. Yang; J. W. Heo; H. N. Lee; T. K. Song; J. G. Yoon

doi:10.3938/jkps.55.820

Quantitative analysis of the nucleation and growth of ferroelectric domains in epitaxial Pb(Zr,Ti)O₃ thin films

S. M. Yang
, J. W. Heo
, H. N. Lee
, T. K. Song
, J. G. Yoon

Materials Science and Technology Div

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We determined simultaneously the domain wall speed (v) and the nucleation rate (N) of ferroelectric (FE) domains in 100 nm-thick epitaxial PbZr _0.2Ti_0.8O₃ capacitors from successive domain evolution images under various applied electric fields (Eapp) by using piezoresponse force microscopy. We found that, at a given Eapp, the v and the N values decreased as the switching process proceeded. The averaged domain wall speed < v > was confirmed to follow the Merz's law, < v > ∝ exp[-(.E₀/E_app)], with an activation field E₀ of about 700 kV/cm. Moreover, we found that the nucleation process played a more important role in the FE domain switching at higher fields while domain wall motion mainly contributed to the switching at lower fields.

Original language	English
Pages (from-to)	820-824
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	2 PART 1
DOIs	https://doi.org/10.3938/jkps.55.820
State	Published - Aug 2009

Keywords

Domain
Ferroelectric
PZT
Piezoresponse force microscopy
Switching

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title = "Quantitative analysis of the nucleation and growth of ferroelectric domains in epitaxial Pb(Zr,Ti)O3 thin films",

abstract = "We determined simultaneously the domain wall speed (v) and the nucleation rate (N) of ferroelectric (FE) domains in 100 nm-thick epitaxial PbZr 0.2Ti0.8O3 capacitors from successive domain evolution images under various applied electric fields (Eapp) by using piezoresponse force microscopy. We found that, at a given Eapp, the v and the N values decreased as the switching process proceeded. The averaged domain wall speed < v > was confirmed to follow the Merz's law, < v > ∝ exp[-(.E0/Eapp)], with an activation field E0 of about 700 kV/cm. Moreover, we found that the nucleation process played a more important role in the FE domain switching at higher fields while domain wall motion mainly contributed to the switching at lower fields.",

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TY - JOUR

T1 - Quantitative analysis of the nucleation and growth of ferroelectric domains in epitaxial Pb(Zr,Ti)O3 thin films

AU - Yang, S. M.

AU - Heo, J. W.

AU - Lee, H. N.

AU - Song, T. K.

AU - Yoon, J. G.

PY - 2009/8

Y1 - 2009/8

N2 - We determined simultaneously the domain wall speed (v) and the nucleation rate (N) of ferroelectric (FE) domains in 100 nm-thick epitaxial PbZr 0.2Ti0.8O3 capacitors from successive domain evolution images under various applied electric fields (Eapp) by using piezoresponse force microscopy. We found that, at a given Eapp, the v and the N values decreased as the switching process proceeded. The averaged domain wall speed < v > was confirmed to follow the Merz's law, < v > ∝ exp[-(.E0/Eapp)], with an activation field E0 of about 700 kV/cm. Moreover, we found that the nucleation process played a more important role in the FE domain switching at higher fields while domain wall motion mainly contributed to the switching at lower fields.

AB - We determined simultaneously the domain wall speed (v) and the nucleation rate (N) of ferroelectric (FE) domains in 100 nm-thick epitaxial PbZr 0.2Ti0.8O3 capacitors from successive domain evolution images under various applied electric fields (Eapp) by using piezoresponse force microscopy. We found that, at a given Eapp, the v and the N values decreased as the switching process proceeded. The averaged domain wall speed < v > was confirmed to follow the Merz's law, < v > ∝ exp[-(.E0/Eapp)], with an activation field E0 of about 700 kV/cm. Moreover, we found that the nucleation process played a more important role in the FE domain switching at higher fields while domain wall motion mainly contributed to the switching at lower fields.

KW - Domain

KW - Ferroelectric

KW - PZT

KW - Piezoresponse force microscopy

KW - Switching

UR - https://www.scopus.com/pages/publications/70349310531

U2 - 10.3938/jkps.55.820

DO - 10.3938/jkps.55.820

M3 - Article

AN - SCOPUS:70349310531

SN - 0374-4884

VL - 55

SP - 820

EP - 824

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2 PART 1

ER -

Quantitative analysis of the nucleation and growth of ferroelectric domains in epitaxial Pb(Zr,Ti)O₃ thin films

Abstract

Keywords

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