TY - JOUR
T1 - Quantitative analysis of intermolecular interactions in orthorhombic rubrene
AU - Hathwar, Venkatesha R.
AU - Sist, Mattia
AU - Jørgensen, Mads R.V.
AU - Mamakhel, Aref H.
AU - Wang, Xiaoping
AU - Hoffmann, Christina M.
AU - Sugimoto, Kunihisa
AU - Overgaard, Jacob
AU - Iversen, Bo Brummerstedt
PY - 2015/9/1
Y1 - 2015/9/1
N2 - Rubrene is one of the most studied organic semiconductors to date due to its high charge carrier mobility which makes it a potentially applicable compound in modern electronic devices. Previous electronic device characterizations and first principles theoretical calculations assigned the semiconducting properties of rubrene to the presence of a large overlap of the extended π-conjugated core between molecules. We present here the electron density distribution in rubrene at 20 K and at 100 K obtained using a combination of high-resolution X-ray and neutron diffraction data. The topology of the electron density and energies of intermolecular interactions are studied quantitatively. Specifically, the presence of Cπ⋯Cπ interactions between neighbouring tetracene backbones of the rubrene molecules is experimentally confirmed from a topological analysis of the electron density, Non-Covalent Interaction (NCI) analysis and the calculated interaction energy of molecular dimers. A significant contribution to the lattice energy of the crystal is provided by H - H interactions. The electron density features of H - H bonding, and the interaction energy of molecular dimers connected by H - H interaction clearly demonstrate an importance of these weak interactions in the stabilization of the crystal structure. The quantitative nature of the intermolecular interactions is virtually unchanged between 20 K and 100 K suggesting that any changes in carrier transport at these low temperatures would have a different origin. The obtained experimental results are further supported by theoretical calculations.
AB - Rubrene is one of the most studied organic semiconductors to date due to its high charge carrier mobility which makes it a potentially applicable compound in modern electronic devices. Previous electronic device characterizations and first principles theoretical calculations assigned the semiconducting properties of rubrene to the presence of a large overlap of the extended π-conjugated core between molecules. We present here the electron density distribution in rubrene at 20 K and at 100 K obtained using a combination of high-resolution X-ray and neutron diffraction data. The topology of the electron density and energies of intermolecular interactions are studied quantitatively. Specifically, the presence of Cπ⋯Cπ interactions between neighbouring tetracene backbones of the rubrene molecules is experimentally confirmed from a topological analysis of the electron density, Non-Covalent Interaction (NCI) analysis and the calculated interaction energy of molecular dimers. A significant contribution to the lattice energy of the crystal is provided by H - H interactions. The electron density features of H - H bonding, and the interaction energy of molecular dimers connected by H - H interaction clearly demonstrate an importance of these weak interactions in the stabilization of the crystal structure. The quantitative nature of the intermolecular interactions is virtually unchanged between 20 K and 100 K suggesting that any changes in carrier transport at these low temperatures would have a different origin. The obtained experimental results are further supported by theoretical calculations.
KW - electron density
KW - interaction energy
KW - organic semiconductor
KW - rubrene
UR - http://www.scopus.com/inward/record.url?scp=84940942119&partnerID=8YFLogxK
U2 - 10.1107/S2052252515012130
DO - 10.1107/S2052252515012130
M3 - Article
AN - SCOPUS:84940942119
SN - 2052-2525
VL - 2
SP - 563
EP - 574
JO - IUCrJ
JF - IUCrJ
ER -