Quantification of Dopant Profiles in SiGe HBT Devices

Eric J. Jones; Jonathan Poplawsky; Donavan Leonard; Keith Chung; Kevin Mercurio; Paul Brabant; Thomas Adam; Patrick B. Shea; Thomas Knight

doi:10.1109/BCICTS.2018.8551114

Quantification of Dopant Profiles in SiGe HBT Devices

Eric J. Jones, Jonathan Poplawsky, Donavan Leonard, Keith Chung, Kevin Mercurio, Paul Brabant, Thomas Adam, Patrick B. Shea, Thomas Knight

Materials MicroAnalysis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um ² ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um ² ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.

Original language	English
Title of host publication	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	255-258
Number of pages	4
ISBN (Electronic)	9781538665022
DOIs	https://doi.org/10.1109/BCICTS.2018.8551114
State	Published - Nov 27 2018
Event	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States Duration: Oct 15 2018 → Oct 17 2018

Publication series

Name	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018

Conference

Conference	2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
Country/Territory	United States
City	San Diego
Period	10/15/18 → 10/17/18

Funding

APT and STEM were conducted at ORNL's CNMS, which is a U.S. D.O.E. Office of Science User Facility.

Funders	Funder number
College of Science, Technology, Engineering, and Mathematics, Youngstown State University

Keywords

Atom probe tomography
HBTs
Scanning transmission electron microscopy
Secondary ion mass spectroscopy
SiGe

Access to Document

10.1109/BCICTS.2018.8551114

Cite this

Jones, E. J., Poplawsky, J., Leonard, D., Chung, K., Mercurio, K., Brabant, P., Adam, T., Shea, P. B., & Knight, T. (2018). Quantification of Dopant Profiles in SiGe HBT Devices. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 (pp. 255-258). Article 8551114 (2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS.2018.8551114

Jones, Eric J. ; Poplawsky, Jonathan ; Leonard, Donavan et al. / Quantification of Dopant Profiles in SiGe HBT Devices. 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 255-258 (2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018).

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title = "Quantification of Dopant Profiles in SiGe HBT Devices",

abstract = " We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.",

keywords = "Atom probe tomography, HBTs, Scanning transmission electron microscopy, Secondary ion mass spectroscopy, SiGe",

author = "Jones, {Eric J.} and Jonathan Poplawsky and Donavan Leonard and Keith Chung and Kevin Mercurio and Paul Brabant and Thomas Adam and Shea, {Patrick B.} and Thomas Knight",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 ; Conference date: 15-10-2018 Through 17-10-2018",

year = "2018",

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day = "27",

doi = "10.1109/BCICTS.2018.8551114",

language = "English",

series = "2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Jones, EJ, Poplawsky, J, Leonard, D, Chung, K, Mercurio, K, Brabant, P, Adam, T, Shea, PB & Knight, T 2018, Quantification of Dopant Profiles in SiGe HBT Devices. in 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018., 8551114, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018, Institute of Electrical and Electronics Engineers Inc., pp. 255-258, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018, San Diego, United States, 10/15/18. https://doi.org/10.1109/BCICTS.2018.8551114

Quantification of Dopant Profiles in SiGe HBT Devices. / Jones, Eric J.; Poplawsky, Jonathan; Leonard, Donavan et al.
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 255-258 8551114 (2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jones, Eric J.

AU - Poplawsky, Jonathan

AU - Leonard, Donavan

AU - Chung, Keith

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AU - Brabant, Paul

AU - Adam, Thomas

AU - Shea, Patrick B.

AU - Knight, Thomas

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N2 - We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.

AB - We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.

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BT - 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018

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Jones EJ, Poplawsky J, Leonard D, Chung K, Mercurio K, Brabant P et al. Quantification of Dopant Profiles in SiGe HBT Devices. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 255-258. 8551114. (2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018). doi: 10.1109/BCICTS.2018.8551114

Quantification of Dopant Profiles in SiGe HBT Devices

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