Abstract
We investigated the influence of a chemisorbed S template with c(2 × 2) structure on the epitaxial growth of different oxide buffer layers on (100)<100> Ni. The sulfur superstructure spontaneously forms on the Ni surface during the texturing anneal as a consequence of segregation. However, depending on the initial S bulk concentration and/or specific annealing conditions, the S layer can cover less than the entire substrate's surface. We show that an incomplete c(2 × 2) coverage causes degradation of the seed buffer layer texture as compared to the substrate texture. A simple step consisting of an H2S predeposition anneal can be used to control the superstructure coverage and optimize the seed layer texture.
Original language | English |
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Pages (from-to) | 2549-2554 |
Number of pages | 6 |
Journal | Journal of Materials Research |
Volume | 17 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2002 |
Externally published | Yes |