TY - JOUR
T1 - Q Dependence of the growth-oscillation period of x-ray reflectivity in heteroepitaxy
T2 - Ho/W(110)
AU - Weschke, E.
AU - Schüßler-Langeheine, C.
AU - Meier, R.
AU - Kaindl, G.
AU - Sutter, C.
AU - Abernathy, D.
AU - Grübel, G.
PY - 1997
Y1 - 1997
N2 - We report on pronounced oscillations of the specular x-ray reflectivity as a function of deposited material in epitaxial growth of Ho on W(110). In specular geometry, the periods of these growth oscillations are found to scale inversely with the length of the scattering vector q. This behavior is shown to be characteristic for heteroepitaxial growth, while in homoepitaxy the oscillation period is independent of q. The q dependence has to be accounted for in growth studies with x rays, in particular when growth-oscillation periods are related to the number of deposited layers.
AB - We report on pronounced oscillations of the specular x-ray reflectivity as a function of deposited material in epitaxial growth of Ho on W(110). In specular geometry, the periods of these growth oscillations are found to scale inversely with the length of the scattering vector q. This behavior is shown to be characteristic for heteroepitaxial growth, while in homoepitaxy the oscillation period is independent of q. The q dependence has to be accounted for in growth studies with x rays, in particular when growth-oscillation periods are related to the number of deposited layers.
UR - http://www.scopus.com/inward/record.url?scp=0000343334&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.79.3954
DO - 10.1103/PhysRevLett.79.3954
M3 - Article
AN - SCOPUS:0000343334
SN - 0031-9007
VL - 79
SP - 3954
EP - 3957
JO - Physical Review Letters
JF - Physical Review Letters
IS - 20
ER -