Pulsed laser deposition of SrBi2Ta2O9 thin films for non-volatile memory applications

S. Werner; D. Thomas; S. K. Streiffer; O. Auciello; Angus I. Kingon

Pulsed laser deposition of SrBi₂Ta₂O₉ thin films for non-volatile memory applications

S. Werner, D. Thomas, S. K. Streiffer, O. Auciello, Angus I. Kingon

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Ferroelectric SrBi₂Ta₂O₉ (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization - electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2P_r = 8-13 μC/cm². Capacitors showed negligible fatigue up to 10¹⁰ switching cycles.

Original language	English
Pages (from-to)	235-240
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	397
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

Cite this

@article{46e92534f4c74d9ca3aec98e40714de0,

title = "Pulsed laser deposition of SrBi2Ta2O9 thin films for non-volatile memory applications",

abstract = "Ferroelectric SrBi2Ta2O9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization - electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 μC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.",

author = "S. Werner and D. Thomas and Streiffer, {S. K.} and O. Auciello and Kingon, {Angus I.}",

year = "1996",

language = "English",

volume = "397",

pages = "235--240",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - JOUR

T1 - Pulsed laser deposition of SrBi2Ta2O9 thin films for non-volatile memory applications

AU - Werner, S.

AU - Thomas, D.

AU - Streiffer, S. K.

AU - Auciello, O.

AU - Kingon, Angus I.

PY - 1996

Y1 - 1996

N2 - Ferroelectric SrBi2Ta2O9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization - electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 μC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.

AB - Ferroelectric SrBi2Ta2O9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization - electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 μC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.

UR - http://www.scopus.com/inward/record.url?scp=0029726485&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029726485

SN - 0272-9172

VL - 397

SP - 235

EP - 240

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Pulsed laser deposition of SrBi₂Ta₂O₉ thin films for non-volatile memory applications

Abstract

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