Pulsed laser deposition of single layer, hexagonal boron nitride (white graphene, h-BN) on fiber-oriented Ag(111)/SrTiO3(001)

Daniel Velázquez, Rachel Seibert, Hamdi Man, Linda Spentzouris, Jeff Terry

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

We report on the growth of 1-10 ML films of hexagonal boron nitride (h-BN), also known as white graphene, on fiber-oriented Ag buffer films on SrTiO3(001) by pulsed laser deposition. The Ag buffer films of 40nm thickness were used as substitutes for expensive single crystal metallic substrates. In-situ, reflection high-energy electron diffraction was used to monitor the surface structure of the Ag films and to observe the formation of the characteristic h-BN diffraction pattern. Further evidence of the growth of h-BN was provided by attenuated total reflectance spectroscopy, which showed the characteristic h-BN peaks at ∼780cm-1 and 1367.4cm-1. Ex-situ photoelectron spectroscopy showed that the surface of the h-BN films is stoichiometric. The physical structure of the films was confirmed by scanning electron microscopy. The h-BN films grew as large, sub-millimeter sheets with nano- and micro-sheets scattered on the surface. The h-BN sheets can be exfoliated by the micromechanical adhesive tape method. Spectral analysis was performed by energy dispersive spectroscopy in order to identify the h-BN sheets after exfoliation. The use of thin film Ag allows for reduced use of Ag and makes it possible to adjust the surface morphology of the thin film prior to h-BN growth.

Original languageEnglish
Article number095306
JournalJournal of Applied Physics
Volume119
Issue number9
DOIs
StatePublished - Mar 7 2016
Externally publishedYes

Funding

The authors thank Aditya Unni, Adam Hock, José Orozco, and Frank Harwarth for valuable discussions and the facilitation of resources crucial for the completion of these studies. This work was funded by the National Science Foundation under Grant No. 0969989, the Department of Energy under Grant No. DE-SC0007952, and the U.S. Department of Education through the GAANN Fellowship Program Award No. P200A090137.

FundersFunder number
National Science Foundation
U.S. Department of EnergyDE-SC0007952
Directorate for Mathematical and Physical Sciences0969989
U.S. Department of EducationP200A090137

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