Pulsed laser deposition of epitaxial buffer layers on LiNbO 3

F. Sánchez, N. Domingo, M. V. García-Cuenca, C. Guerrero, C. Ferrater, M. Varela

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

The aim of this work is to obtain films with suitable characteristics for use as buffer layers for YBCO superconducting electrodes in LiNbO 3 -based electro-optic devices. For this purpose, an epitaxial buffer with single orientation and low surface roughness is required. The possibilities of two oxides, yttria-stabilised zirconia (YSZ) and CeO 2 , have been explored. The films were grown on X-cut LiNbO 3 single crystals by pulsed laser deposition, and the influence of the processing conditions was studied. The YSZ films are epitaxial with single (0 0 1) orientation and the surface is appropriate for use as a first layer in a heterostructure. These were the properties found in films grown under relatively broad ranges of deposition parameters, which allows a very high reproducibility. However, the lithium-deficient LiNb 3 O 8 compound was found at the interface in all the films. This compound was not observed when CeO 2 films were deposited. These films are epitaxial and (0 1 1)-oriented, although they can also contain (0 0 1)-oriented crystals.

Original languageEnglish
Pages (from-to)397-402
Number of pages6
JournalApplied Surface Science
Volume186
Issue number1-4
DOIs
StatePublished - Jan 28 2002
Externally publishedYes
EventProceedings of the European Materials Research Society 2001 Symposium - Strasbourg, France
Duration: Jun 5 2001Jun 5 2001

Funding

Financial support by the CICYT of the Spanish Government (Project MAT99-0984) is acknowledged.

FundersFunder number
Comisión Interministerial de Ciencia y TecnologíaMAT99-0984

    Keywords

    • CeO
    • Epitaxy
    • LiNbO
    • Oxides
    • Thin films
    • YSZ

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