Pulsed laser deposition of doped epitaxial compound semiconductor films

D. H. Lowndes; C. M. Rouleau; D. B. Geohegan; A. A. Puretzky; M. A. Strauss; A. J. Pedraza; J. W. Park; J. D. Budai; D. B. Poker

Pulsed laser deposition of doped epitaxial compound semiconductor films

D. H. Lowndes, C. M. Rouleau, D. B. Geohegan, A. A. Puretzky, M. A. Strauss, A. J. Pedraza, J. W. Park, J. D. Budai, D. B. Poker

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Conference article › peer-review

Abstract

The past decade has seen rapid growth in fundamental studies of the pulsed laser ablation (PLA) process and its application for pulsed laser deposition (PLD). However, there has been relatively little use of PLD to grow doped, epitaxial compound (or elemental) semiconductor films. Nevertheless, it is clear that some of the advantages of the ablation process also should apply for exploratory semiconductor materials research, especially for complex multi-element materials. Just recently, several groups have conducted experiments to determine whether PLA can grow structurally high quality and highly doped epitaxial compound semiconductor films. One particular study used closely related II-VI and I-III-VI materials.

Original language	English
Pages (from-to)	[d]2pp
Journal	LEOS Summer Topical Meeting
State	Published - 1996
Event	Proceedings of the 1996 IEEE/LEOS Summer Topical Meeting - Keystone, CO, USA Duration: Aug 5 1996 → Aug 9 1996

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@article{4a7ddf61e78e440db399764bb632bdd8,

title = "Pulsed laser deposition of doped epitaxial compound semiconductor films",

abstract = "The past decade has seen rapid growth in fundamental studies of the pulsed laser ablation (PLA) process and its application for pulsed laser deposition (PLD). However, there has been relatively little use of PLD to grow doped, epitaxial compound (or elemental) semiconductor films. Nevertheless, it is clear that some of the advantages of the ablation process also should apply for exploratory semiconductor materials research, especially for complex multi-element materials. Just recently, several groups have conducted experiments to determine whether PLA can grow structurally high quality and highly doped epitaxial compound semiconductor films. One particular study used closely related II-VI and I-III-VI materials.",

author = "Lowndes, {D. H.} and Rouleau, {C. M.} and Geohegan, {D. B.} and Puretzky, {A. A.} and Strauss, {M. A.} and Pedraza, {A. J.} and Park, {J. W.} and Budai, {J. D.} and Poker, {D. B.}",

year = "1996",

language = "English",

pages = "[d]2pp",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

note = "Proceedings of the 1996 IEEE/LEOS Summer Topical Meeting ; Conference date: 05-08-1996 Through 09-08-1996",

}

TY - JOUR

T1 - Pulsed laser deposition of doped epitaxial compound semiconductor films

AU - Lowndes, D. H.

AU - Rouleau, C. M.

AU - Geohegan, D. B.

AU - Puretzky, A. A.

AU - Strauss, M. A.

AU - Pedraza, A. J.

AU - Park, J. W.

AU - Budai, J. D.

AU - Poker, D. B.

PY - 1996

Y1 - 1996

N2 - The past decade has seen rapid growth in fundamental studies of the pulsed laser ablation (PLA) process and its application for pulsed laser deposition (PLD). However, there has been relatively little use of PLD to grow doped, epitaxial compound (or elemental) semiconductor films. Nevertheless, it is clear that some of the advantages of the ablation process also should apply for exploratory semiconductor materials research, especially for complex multi-element materials. Just recently, several groups have conducted experiments to determine whether PLA can grow structurally high quality and highly doped epitaxial compound semiconductor films. One particular study used closely related II-VI and I-III-VI materials.

AB - The past decade has seen rapid growth in fundamental studies of the pulsed laser ablation (PLA) process and its application for pulsed laser deposition (PLD). However, there has been relatively little use of PLD to grow doped, epitaxial compound (or elemental) semiconductor films. Nevertheless, it is clear that some of the advantages of the ablation process also should apply for exploratory semiconductor materials research, especially for complex multi-element materials. Just recently, several groups have conducted experiments to determine whether PLA can grow structurally high quality and highly doped epitaxial compound semiconductor films. One particular study used closely related II-VI and I-III-VI materials.

UR - http://www.scopus.com/inward/record.url?scp=0029720849&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029720849

SN - 1099-4742

SP - [d]2pp

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - Proceedings of the 1996 IEEE/LEOS Summer Topical Meeting

Y2 - 5 August 1996 through 9 August 1996

ER -

Pulsed laser deposition of doped epitaxial compound semiconductor films

Abstract

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