Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applications

Daniel T. Yimam; Heng Zhang; Jamo Momand; Bart J. Kooi

doi:10.1016/j.mssp.2021.105965

Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applications

Daniel T. Yimam, Heng Zhang, Jamo Momand, Bart J. Kooi

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related to e.g. too high programming current (power consumption), resistance drift, data retention (low crystallization temperature), phase separation and density change upon switching stand in the way to make PCM really attractive. GaSb thin films have interesting optical and electrical properties which are attractive for optoelectronic and PCM applications but so far reported stoichiometric GaSb compositions are Sb-rich which produced reliability issues in PCM devices. In this study, we managed to deposit stoichiometric GaSb thin films using pulsed laser deposition (PLD) by varying deposition parameters and conditions. Using electron microscopy, the morphology of deposited films and target surface and the compositional deviation from exact stoichiometry have been investigated. We show that the directional nature of laser-target interaction is directly responsible for film quality in PLD in which particulates with high number density are generated due to directional pillar formation. Suppressing this pillar formation, by a simple 180° target rotation, showed an increase in deposition yield by 60%, exact stoichiometric transfer from target to substrate, and large reduction in particulate density. Moreover, from XRD analysis, we show that exact stoichiometric transfer from target to substrate is crucial for structural integrity of the produced films. Temperature induced structural transformation from resistivity vs. temperature measurements show a high crystallization temperature of 250 °C for stoichiometric GaSb thin film. We believe the exact stoichiometric GaSb thin films with reduced particulate densities and favorable structural and (opto)electronic properties are attractive for future PCM devices.

Original language	English
Article number	105965
Journal	Materials Science in Semiconductor Processing
Volume	133
DOIs	https://doi.org/10.1016/j.mssp.2021.105965
State	Published - Oct 2021
Externally published	Yes

Funding

This project has received funding from the European Union's Horizon 2020 Research and Innovation Programme “BeforeHand” (Boosting Performance of Phase Change Devices by Hetero- and Nanostructure Material Design)” under Grant Agreement No. 824957. This project has received funding from the European Union's Horizon 2020 Research and Innovation Programme ?BeforeHand? (Boosting Performance of Phase Change Devices by Hetero- and Nanostructure Material Design)? under Grant Agreement No. 824957.

Funders	Funder number
European Union's Horizon 2020 Research and Innovation Programme ?
Nanostructure Material Design
Horizon 2020 Framework Programme	824957
Horizon 2020

Keywords

GaSb thin Films
Phase change materials
Pulsed laser deposition
Target rotation

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10.1016/j.mssp.2021.105965

Cite this

@article{5aaef01db1644fae97d3d5fdd074a3af,

title = "Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applications",

abstract = "Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related to e.g. too high programming current (power consumption), resistance drift, data retention (low crystallization temperature), phase separation and density change upon switching stand in the way to make PCM really attractive. GaSb thin films have interesting optical and electrical properties which are attractive for optoelectronic and PCM applications but so far reported stoichiometric GaSb compositions are Sb-rich which produced reliability issues in PCM devices. In this study, we managed to deposit stoichiometric GaSb thin films using pulsed laser deposition (PLD) by varying deposition parameters and conditions. Using electron microscopy, the morphology of deposited films and target surface and the compositional deviation from exact stoichiometry have been investigated. We show that the directional nature of laser-target interaction is directly responsible for film quality in PLD in which particulates with high number density are generated due to directional pillar formation. Suppressing this pillar formation, by a simple 180° target rotation, showed an increase in deposition yield by 60%, exact stoichiometric transfer from target to substrate, and large reduction in particulate density. Moreover, from XRD analysis, we show that exact stoichiometric transfer from target to substrate is crucial for structural integrity of the produced films. Temperature induced structural transformation from resistivity vs. temperature measurements show a high crystallization temperature of 250 °C for stoichiometric GaSb thin film. We believe the exact stoichiometric GaSb thin films with reduced particulate densities and favorable structural and (opto)electronic properties are attractive for future PCM devices.",

keywords = "GaSb thin Films, Phase change materials, Pulsed laser deposition, Target rotation",

author = "Yimam, {Daniel T.} and Heng Zhang and Jamo Momand and Kooi, {Bart J.}",

note = "Publisher Copyright: {\textcopyright} 2021 The Authors",

year = "2021",

month = oct,

doi = "10.1016/j.mssp.2021.105965",

language = "English",

volume = "133",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier",

}

TY - JOUR

T1 - Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applications

AU - Yimam, Daniel T.

AU - Zhang, Heng

AU - Momand, Jamo

AU - Kooi, Bart J.

PY - 2021/10

Y1 - 2021/10

N2 - Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related to e.g. too high programming current (power consumption), resistance drift, data retention (low crystallization temperature), phase separation and density change upon switching stand in the way to make PCM really attractive. GaSb thin films have interesting optical and electrical properties which are attractive for optoelectronic and PCM applications but so far reported stoichiometric GaSb compositions are Sb-rich which produced reliability issues in PCM devices. In this study, we managed to deposit stoichiometric GaSb thin films using pulsed laser deposition (PLD) by varying deposition parameters and conditions. Using electron microscopy, the morphology of deposited films and target surface and the compositional deviation from exact stoichiometry have been investigated. We show that the directional nature of laser-target interaction is directly responsible for film quality in PLD in which particulates with high number density are generated due to directional pillar formation. Suppressing this pillar formation, by a simple 180° target rotation, showed an increase in deposition yield by 60%, exact stoichiometric transfer from target to substrate, and large reduction in particulate density. Moreover, from XRD analysis, we show that exact stoichiometric transfer from target to substrate is crucial for structural integrity of the produced films. Temperature induced structural transformation from resistivity vs. temperature measurements show a high crystallization temperature of 250 °C for stoichiometric GaSb thin film. We believe the exact stoichiometric GaSb thin films with reduced particulate densities and favorable structural and (opto)electronic properties are attractive for future PCM devices.

AB - Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related to e.g. too high programming current (power consumption), resistance drift, data retention (low crystallization temperature), phase separation and density change upon switching stand in the way to make PCM really attractive. GaSb thin films have interesting optical and electrical properties which are attractive for optoelectronic and PCM applications but so far reported stoichiometric GaSb compositions are Sb-rich which produced reliability issues in PCM devices. In this study, we managed to deposit stoichiometric GaSb thin films using pulsed laser deposition (PLD) by varying deposition parameters and conditions. Using electron microscopy, the morphology of deposited films and target surface and the compositional deviation from exact stoichiometry have been investigated. We show that the directional nature of laser-target interaction is directly responsible for film quality in PLD in which particulates with high number density are generated due to directional pillar formation. Suppressing this pillar formation, by a simple 180° target rotation, showed an increase in deposition yield by 60%, exact stoichiometric transfer from target to substrate, and large reduction in particulate density. Moreover, from XRD analysis, we show that exact stoichiometric transfer from target to substrate is crucial for structural integrity of the produced films. Temperature induced structural transformation from resistivity vs. temperature measurements show a high crystallization temperature of 250 °C for stoichiometric GaSb thin film. We believe the exact stoichiometric GaSb thin films with reduced particulate densities and favorable structural and (opto)electronic properties are attractive for future PCM devices.

KW - GaSb thin Films

KW - Phase change materials

KW - Pulsed laser deposition

KW - Target rotation

UR - http://www.scopus.com/inward/record.url?scp=85108086295&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2021.105965

DO - 10.1016/j.mssp.2021.105965

M3 - Article

AN - SCOPUS:85108086295

SN - 1369-8001

VL - 133

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 105965

ER -

Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applications

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