Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablation

Material Science

• Heterojunction 100%
• Laser Ablation 100%
• Film 66%
• X-Ray Diffraction 33%
• Energy Density 33%
• Scanning Electron Microscopy 33%
• Crystallite 33%

Engineering

• Heterostructures 100%
• Ray Diffraction 50%
• Deposition Temperature 50%
• Heterojunctions 50%
• Flux Density 50%
• Crystallite 50%

Physics

• Laser Ablation 100%
• Scanning Electron Microscopy 33%
• X Ray Diffraction 33%
• Flux Density 33%
• Heterojunctions 33%
• Crystallite 33%
• Beamline 33%