Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablation

C. M. Rouleau, S. Kang, D. H. Lowndes

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

GaN/TiN heterostructures were deposited on 4° miscut Si(111) substrates by pulsed KrF laser ablation of TiN through vacuum, followed by reactive pulsed KrF laser ablation of liquid Ga through 70-75 mTorr of microwave-activated NH3. Deposition temperatures of 950°C and 1050°C were employed for the TiN layer while 900°C was employed for the GaN layer. The targets were positioned 5 cm from the substrate and ablated by using a reimaging beamline at a nominal energy density of 3-4 J/cm2. X-ray diffraction (XRD) revealed a highly textured heterostructure with GaN(0001)//TiN(111)//Si(111) and with a rocking curve width for both GaN(0001) and TiN(111) equal to ∼ 1.1°. The mosaic spread through the TiN(001) reflection was ∼ 1.3°, whereas that of the GaN(1011) was undetectable because of low S/N. Scanning electron microscopy revealed large oriented 10 μm-sized hexagonal crystallites decorating large depressions in the TiN film with many smaller pits also present. The effect of substrate processing and TiN film processing on pit formation was explored.

Original languageEnglish
Pages (from-to)S441-S445
JournalApplied Physics A: Materials Science and Processing
Volume69
Issue number7
DOIs
StatePublished - 1999

Fingerprint

Dive into the research topics of 'Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablation'. Together they form a unique fingerprint.

Cite this