Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers

Sang Ho Kim; Jeong Tae Maeng; Chel Jong Choi; Jae Hyeon Leem; Myung Soo Han; Tae Yeon Seong

doi:10.1149/1.1922873

Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers

Sang Ho Kim, Jeong Tae Maeng, Chel Jong Choi, Jae Hyeon Leem, Myung Soo Han, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report on the formation of ohmic contacts to As-doped ZnO layers using a Pt/indium tin oxide (ITO) scheme. The As-doped ZnO layer shows p-type conductivity with carrier concentrations of 5.12-9.74×10¹⁶ cm^-3 when annealed at 25-400°C for 1 min in nitrogen ambient. However, the ZnO layers exhibit n-type characteristics with carrier concentration ca.10¹⁸-ca.10¹⁹ cm^-3 when annealed at 500-800°C. The Pt/ITO contacts produce contact resistivities of 8.0×10^-4 - 3.5×10^-3 Ω cm² upon annealing at 300-600°C. Possible ohmic formation mechanisms for the Pt/ITO contacts to the As-doped ZnO layers are described and discussed.

Original language	English
Pages (from-to)	G167-G169
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	7
DOIs	https://doi.org/10.1149/1.1922873
State	Published - 2005
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1922873

Cite this

@article{1e15ecc88e834347981233a6a75d016c,

title = "Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers",

abstract = "We report on the formation of ohmic contacts to As-doped ZnO layers using a Pt/indium tin oxide (ITO) scheme. The As-doped ZnO layer shows p-type conductivity with carrier concentrations of 5.12-9.74×1016 cm-3 when annealed at 25-400°C for 1 min in nitrogen ambient. However, the ZnO layers exhibit n-type characteristics with carrier concentration ca.1018-ca.1019 cm-3 when annealed at 500-800°C. The Pt/ITO contacts produce contact resistivities of 8.0×10-4 - 3.5×10-3 Ω cm2 upon annealing at 300-600°C. Possible ohmic formation mechanisms for the Pt/ITO contacts to the As-doped ZnO layers are described and discussed.",

author = "Kim, {Sang Ho} and Maeng, {Jeong Tae} and Choi, {Chel Jong} and Leem, {Jae Hyeon} and Han, {Myung Soo} and Seong, {Tae Yeon}",

year = "2005",

doi = "10.1149/1.1922873",

language = "English",

volume = "8",

pages = "G167--G169",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "7",

}

TY - JOUR

T1 - Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers

AU - Kim, Sang Ho

AU - Maeng, Jeong Tae

AU - Choi, Chel Jong

AU - Leem, Jae Hyeon

AU - Han, Myung Soo

AU - Seong, Tae Yeon

PY - 2005

Y1 - 2005

N2 - We report on the formation of ohmic contacts to As-doped ZnO layers using a Pt/indium tin oxide (ITO) scheme. The As-doped ZnO layer shows p-type conductivity with carrier concentrations of 5.12-9.74×1016 cm-3 when annealed at 25-400°C for 1 min in nitrogen ambient. However, the ZnO layers exhibit n-type characteristics with carrier concentration ca.1018-ca.1019 cm-3 when annealed at 500-800°C. The Pt/ITO contacts produce contact resistivities of 8.0×10-4 - 3.5×10-3 Ω cm2 upon annealing at 300-600°C. Possible ohmic formation mechanisms for the Pt/ITO contacts to the As-doped ZnO layers are described and discussed.

AB - We report on the formation of ohmic contacts to As-doped ZnO layers using a Pt/indium tin oxide (ITO) scheme. The As-doped ZnO layer shows p-type conductivity with carrier concentrations of 5.12-9.74×1016 cm-3 when annealed at 25-400°C for 1 min in nitrogen ambient. However, the ZnO layers exhibit n-type characteristics with carrier concentration ca.1018-ca.1019 cm-3 when annealed at 500-800°C. The Pt/ITO contacts produce contact resistivities of 8.0×10-4 - 3.5×10-3 Ω cm2 upon annealing at 300-600°C. Possible ohmic formation mechanisms for the Pt/ITO contacts to the As-doped ZnO layers are described and discussed.

UR - http://www.scopus.com/inward/record.url?scp=23244432451&partnerID=8YFLogxK

U2 - 10.1149/1.1922873

DO - 10.1149/1.1922873

M3 - Article

AN - SCOPUS:23244432451

SN - 1099-0062

VL - 8

SP - G167-G169

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Pt/Indium tin oxide ohmic contacts to arsenic-doped p-type ZnO layers

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this