Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction

Xiangyu Zeng; Ge Ye; Fazhi Yang; Qikai Ye; Liang Zhang; Boyang Ma; Yulu Liu; Mengwei Xie; Genquan Han; Yue Hao; Jikui Luo; Xin Lu; Yan Liu; Xiaozhi Wang

doi:10.1021/acsami.3c15363

Proximity Effect-Induced Magnetoresistance Enhancement in a Fe₃GeTe₂/NbSe₂/Fe₃GeTe₂ Magnetic Tunnel Junction

Xiangyu Zeng, Ge Ye, Fazhi Yang, Qikai Ye, Liang Zhang, Boyang Ma, Yulu Liu, Mengwei Xie, Genquan Han, Yue Hao, Jikui Luo, Xin Lu, Yan Liu, Xiaozhi Wang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe₃GeTe₂ (FGT)/NbSe₂/FGT near the NbSe₂ layer’s superconducting critical temperature (T_C) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe₂ spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe₂ layer. Correspondingly, the device with a thick NbSe₂ layer displays no MR increase near T_C but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics’ properties and the achievement of spin-based integrated circuits.

Original language	English
Journal	ACS Applied Materials and Interfaces
DOIs	https://doi.org/10.1021/acsami.3c15363
State	Accepted/In press - 2023
Externally published	Yes

Funding

This work was supported by the following programs: the National Natural Science Foundation of China (62304166, 62174147, 21927810, 62025402, 62090033, 91964202, 92064003, 92264202, and 62293522), Key Research and Development Project of Zhejiang (2022C01141), Dr. Li Dak Sum & Yip Yio Chin Development Fund for Regenerative Medicine, Zhejiang University, the Fundamental Research Funds for the Central Universities (XJSJ23008, QTZX23040, and QTZX23079) and the Natural Science Basic Research Program of Shanxi (2023JC-XJ-01), the National Key R&D Program of China (no. 2022ZD0119002), and Major Program of Zhejiang Natural Science Foundation (DT23F0402). The authors gratefully acknowledge the support of the Zhejiang University Micronano Fabrication Center.

Funders	Funder number
Key Research and Development Project of Zhejiang	2022C01141
Zhejiang University Micronano Fabrication Center
National Natural Science Foundation of China	62174147, 62293522, 21927810, 92264202, 62025402, 92064003, 62090033, 62304166, 91964202
National Natural Science Foundation of China
Natural Science Foundation of Zhejiang Province	DT23F0402
Natural Science Foundation of Zhejiang Province
Zhejiang University
National Key Research and Development Program of China	2022ZD0119002
National Key Research and Development Program of China
Fundamental Research Funds for the Central Universities	QTZX23040, QTZX23079, XJSJ23008
Fundamental Research Funds for the Central Universities
Natural Science Basic Research Program of Shaanxi Province	2023JC-XJ-01
Natural Science Basic Research Program of Shaanxi Province

Keywords

magnetic proximity effect
magnetic tunnel junction
magnetoresistance enhancement
van der Waals heterojunction

Access to Document

10.1021/acsami.3c15363

Cite this

@article{e0c8d888a4bd4ba39eab199e000bd44b,

title = "Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction",

abstract = "The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe3GeTe2 (FGT)/NbSe2/FGT near the NbSe2 layer{\textquoteright}s superconducting critical temperature (TC) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe2 layer. Correspondingly, the device with a thick NbSe2 layer displays no MR increase near TC but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics{\textquoteright} properties and the achievement of spin-based integrated circuits.",

keywords = "magnetic proximity effect, magnetic tunnel junction, magnetoresistance enhancement, van der Waals heterojunction",

author = "Xiangyu Zeng and Ge Ye and Fazhi Yang and Qikai Ye and Liang Zhang and Boyang Ma and Yulu Liu and Mengwei Xie and Genquan Han and Yue Hao and Jikui Luo and Xin Lu and Yan Liu and Xiaozhi Wang",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society",

year = "2023",

doi = "10.1021/acsami.3c15363",

language = "English",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

}

TY - JOUR

T1 - Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction

AU - Zeng, Xiangyu

AU - Ye, Ge

AU - Yang, Fazhi

AU - Ye, Qikai

AU - Zhang, Liang

AU - Ma, Boyang

AU - Liu, Yulu

AU - Xie, Mengwei

AU - Han, Genquan

AU - Hao, Yue

AU - Luo, Jikui

AU - Lu, Xin

AU - Liu, Yan

AU - Wang, Xiaozhi

PY - 2023

Y1 - 2023

N2 - The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe3GeTe2 (FGT)/NbSe2/FGT near the NbSe2 layer’s superconducting critical temperature (TC) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe2 layer. Correspondingly, the device with a thick NbSe2 layer displays no MR increase near TC but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics’ properties and the achievement of spin-based integrated circuits.

AB - The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe3GeTe2 (FGT)/NbSe2/FGT near the NbSe2 layer’s superconducting critical temperature (TC) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe2 layer. Correspondingly, the device with a thick NbSe2 layer displays no MR increase near TC but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics’ properties and the achievement of spin-based integrated circuits.

KW - magnetic proximity effect

KW - magnetic tunnel junction

KW - magnetoresistance enhancement

KW - van der Waals heterojunction

UR - http://www.scopus.com/inward/record.url?scp=85180112783&partnerID=8YFLogxK

U2 - 10.1021/acsami.3c15363

DO - 10.1021/acsami.3c15363

M3 - Article

AN - SCOPUS:85180112783

SN - 1944-8244

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

ER -