Proton irradiation effects on Sb-based heterojunction bipolar transistors

C. F. Lo; H. Y. Kim; J. Kim; Shu Han Chen; Sheng Yu Wang; Jen Inn Chyi; B. Y. Chou; K. H. Chen; Y. L. Wang; C. Y. Chang; S. J. Pearton; L. I. Kravchenko; S. Jang; F. Ren

doi:10.1116/1.3246405

Proton irradiation effects on Sb-based heterojunction bipolar transistors

C. F. Lo, H. Y. Kim, J. Kim, Shu Han Chen, Sheng Yu Wang, Jen Inn Chyi, B. Y. Chou, K. H. Chen, Y. L. Wang, C. Y. Chang, S. J. Pearton, L. I. Kravchenko, S. Jang, F. Ren

Research output: Contribution to journal › Article › peer-review

Abstract

In_0.52Al_0.48As/In_0.39 Ga _0.61As_0.77Sb_0.23/In_0.53 Ga _0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 10¹¹ to 2× 10¹⁵ protons/cm². The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 10¹¹ cm^-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

Original language	English
Pages (from-to)	L33-L37
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	6
DOIs	https://doi.org/10.1116/1.3246405
State	Published - 2009

Funding

The work at Oak Ridge National Laboratory was supported by the Center for Nanophase Materials Sciences, sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy.

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Lo, C. F., Kim, H. Y., Kim, J., Chen, S. H., Wang, S. Y., Chyi, J. I., Chou, B. Y., Chen, K. H., Wang, Y. L., Chang, C. Y., Pearton, S. J., Kravchenko, L. I., Jang, S., & Ren, F. (2009). Proton irradiation effects on Sb-based heterojunction bipolar transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), L33-L37. https://doi.org/10.1116/1.3246405

@article{e9efb14f5e2042f4a252feef816b5067,

title = "Proton irradiation effects on Sb-based heterojunction bipolar transistors",

abstract = "In0.52Al0.48As/In0.39 Ga 0.61As0.77Sb0.23/In0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 1011 to 2× 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.",

author = "Lo, {C. F.} and Kim, {H. Y.} and J. Kim and Chen, {Shu Han} and Wang, {Sheng Yu} and Chyi, {Jen Inn} and Chou, {B. Y.} and Chen, {K. H.} and Wang, {Y. L.} and Chang, {C. Y.} and Pearton, {S. J.} and Kravchenko, {L. I.} and S. Jang and F. Ren",

year = "2009",

doi = "10.1116/1.3246405",

language = "English",

volume = "27",

pages = "L33--L37",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "6",

}

Lo, CF, Kim, HY, Kim, J, Chen, SH, Wang, SY, Chyi, JI, Chou, BY, Chen, KH, Wang, YL, Chang, CY, Pearton, SJ, Kravchenko, LI, Jang, S & Ren, F 2009, 'Proton irradiation effects on Sb-based heterojunction bipolar transistors', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 6, pp. L33-L37. https://doi.org/10.1116/1.3246405

TY - JOUR

T1 - Proton irradiation effects on Sb-based heterojunction bipolar transistors

AU - Lo, C. F.

AU - Kim, H. Y.

AU - Kim, J.

AU - Chen, Shu Han

AU - Wang, Sheng Yu

AU - Chyi, Jen Inn

AU - Chou, B. Y.

AU - Chen, K. H.

AU - Wang, Y. L.

AU - Chang, C. Y.

AU - Pearton, S. J.

AU - Kravchenko, L. I.

AU - Jang, S.

AU - Ren, F.

PY - 2009

Y1 - 2009

N2 - In0.52Al0.48As/In0.39 Ga 0.61As0.77Sb0.23/In0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 1011 to 2× 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

AB - In0.52Al0.48As/In0.39 Ga 0.61As0.77Sb0.23/In0.53 Ga 0.47 As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2× 1011 to 2× 1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2× 1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Proton irradiation effects on Sb-based heterojunction bipolar transistors

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