Proton irradiation effects on AlN/GaN high electron mobility transistors

C. F. Lo; C. Y. Chang; B. H. Chu; H. Y. Kim; J. Kim; David A. Cullen; Lin Zhou; David J. Smith; S. J. Pearton; Amir Dabiran; B. Cui; P. P. Chow; S. Jang; F. Ren

doi:10.1116/1.3482335

Proton irradiation effects on AlN/GaN high electron mobility transistors

C. F. Lo, C. Y. Chang, B. H. Chu, H. Y. Kim, J. Kim, David A. Cullen, Lin Zhou, David J. Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, F. Ren

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 10¹¹ to 2 × 10 ¹⁵ protons/cm². Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 10¹¹ protons/ cm² irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

Original language	English
Pages (from-to)	L47-L51
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	28
Issue number	5
DOIs	https://doi.org/10.1116/1.3482335
State	Published - Sep 2010
Externally published	Yes

Funding

The work at SVTA was partially supported by NASA under Grant No. NNX09CA76C.

Funders	Funder number
National Aeronautics and Space Administration	NNX09CA76C

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Lo, C. F., Chang, C. Y., Chu, B. H., Kim, H. Y., Kim, J., Cullen, D. A., Zhou, L., Smith, D. J., Pearton, S. J., Dabiran, A., Cui, B., Chow, P. P., Jang, S., & Ren, F. (2010). Proton irradiation effects on AlN/GaN high electron mobility transistors. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 28(5), L47-L51. https://doi.org/10.1116/1.3482335

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title = "Proton irradiation effects on AlN/GaN high electron mobility transistors",

abstract = "AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.",

author = "Lo, {C. F.} and Chang, {C. Y.} and Chu, {B. H.} and Kim, {H. Y.} and J. Kim and Cullen, {David A.} and Lin Zhou and Smith, {David J.} and Pearton, {S. J.} and Amir Dabiran and B. Cui and Chow, {P. P.} and S. Jang and F. Ren",

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T1 - Proton irradiation effects on AlN/GaN high electron mobility transistors

AU - Lo, C. F.

AU - Chang, C. Y.

AU - Chu, B. H.

AU - Kim, H. Y.

AU - Kim, J.

AU - Cullen, David A.

AU - Zhou, Lin

AU - Smith, David J.

AU - Pearton, S. J.

AU - Dabiran, Amir

AU - Cui, B.

AU - Chow, P. P.

AU - Jang, S.

AU - Ren, F.

PY - 2010/9

Y1 - 2010/9

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AB - AlN/GaN high electron mobility transistors (HEMTs) were irradiated with 5 MeV protons at fluences from 2 × 1011 to 2 × 10 15 protons/cm2. Changes from 10% to 35% of the saturation drain current and the source-drain resistances were observed for the HEMTs exposed to the proton irradiations due to radiation-induced carrier scattering and carrier removal. Both forward and reverse bias gate currents were increased after proton irradiation and affected the drain current modulation in the positive gate bias voltage range. There was almost no gate-lag observed for the HEMT exposed to 2 × 1011 protons/ cm2 irradiation and minimal changes for the higher doses, which implied that few surface traps were created by the high energy proton irradiation.

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Proton irradiation effects on AlN/GaN high electron mobility transistors

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