Prospects for single atom location and identification with aberration-corrected STEM

A. R. Lupini; M. Varela; A. Y. Borisevich; Y. Peng; S. J. Pennycook

doi:10.1201/9781351074636

Prospects for single atom location and identification with aberration-corrected STEM

A. R. Lupini
, M. Varela
, A. Y. Borisevich
, Y. Peng
, S. J. Pennycook

electron Microscopy and Microanalysis

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

The prospects for the location and identification of single atoms will be examined. It will be shown how aberration correction is becoming an established and essential tool for increasing the sensitivity in electron microscopy. It will be demonstrated that the STEM provides some unique advantages for the detection and electronic analysis of very small quantities of dopant atoms in the bilik of a sample.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	523-532
Number of pages	10
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636
State	Published - Jan 1 2018

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10.1201/9781351074636

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abstract = "The prospects for the location and identification of single atoms will be examined. It will be shown how aberration correction is becoming an established and essential tool for increasing the sensitivity in electron microscopy. It will be demonstrated that the STEM provides some unique advantages for the detection and electronic analysis of very small quantities of dopant atoms in the bilik of a sample.",

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AU - Peng, Y.

AU - Pennycook, S. J.

PY - 2018/1/1

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AB - The prospects for the location and identification of single atoms will be examined. It will be shown how aberration correction is becoming an established and essential tool for increasing the sensitivity in electron microscopy. It will be demonstrated that the STEM provides some unique advantages for the detection and electronic analysis of very small quantities of dopant atoms in the bilik of a sample.

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M3 - Chapter

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Prospects for single atom location and identification with aberration-corrected STEM

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