Abstract
The prospects for the location and identification of single atoms will be examined. It will be shown how aberration correction is becoming an established and essential tool for increasing the sensitivity in electron microscopy. It will be demonstrated that the STEM provides some unique advantages for the detection and electronic analysis of very small quantities of dopant atoms in the bilik of a sample.
Original language | English |
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Title of host publication | Microscopy of Semiconducting Materials 2003 |
Publisher | CRC Press |
Pages | 523-532 |
Number of pages | 10 |
ISBN (Electronic) | 9781351083089 |
ISBN (Print) | 0750309792, 9781315895536 |
DOIs | |
State | Published - Jan 1 2018 |