Prospects for single atom location and identification with aberration-corrected STEM

A. R. Lupini, M. Varela, A. Y. Borisevich, Y. Peng, S. J. Pennycook

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

The prospects for the location and identification of single atoms will be examined. It will be shown how aberration correction is becoming an established and essential tool for increasing the sensitivity in electron microscopy. It will be demonstrated that the STEM provides some unique advantages for the detection and electronic analysis of very small quantities of dopant atoms in the bilik of a sample.

Original languageEnglish
Title of host publicationMicroscopy of Semiconducting Materials 2003
PublisherCRC Press
Pages523-532
Number of pages10
ISBN (Electronic)9781351083089
ISBN (Print)0750309792, 9781315895536
DOIs
StatePublished - Jan 1 2018

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