Processing of YSZ thin films on dense and porous substrates

Y. Pan; J. H. Zhu; M. Z. Hu; E. A. Payzant

doi:10.1016/j.surfcoat.2005.07.083

Processing of YSZ thin films on dense and porous substrates

Y. Pan, J. H. Zhu, M. Z. Hu, E. A. Payzant

Materials Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Yttria-stabilized zirconia (YSZ) thin films with a Zr/Y molar ratio of 0.84:0.16 were synthesized on both dense Si substrates and porous Ni-YSZ anodes using the spin coating technique. Two polymeric precursors were used to process the YSZ films on the Si substrates. The first one utilized a commercial precursor, with butanol added as the diluting solvent. By controlling the content of butanol in the solution, dense and crack-free YSZ films with thickness of 500 nm were obtained after 8 coating runs with a final anneal of 700 °C for 4 h. X-ray diffraction was used to monitor the crystallization process in the films during annealing, which indicated that the YSZ films started to crystallize at 300-400 °C and became fully crystalline with a cubic structure at temperature ≥600 °C. In the second case, a new YSZ polymeric precursor was prepared and used for coating. It was found that the viscosity of the precursor solution is critical in controlling the film quality. Relatively thick, dense YSZ films were also synthesized on porous Ni-YSZ anode substrates using a combined colloidal-polymer method.

Original language	English
Pages (from-to)	1242-1247
Number of pages	6
Journal	Surface and Coatings Technology
Volume	200
Issue number	5-6
DOIs	https://doi.org/10.1016/j.surfcoat.2005.07.083
State	Published - Nov 21 2005

Funding

This research project was financially supported by the National Science Foundation (# DMR-0238113) and the Division of Materials Science, Office of Basic Energy Sciences (#KC0203010), U.S. Department of Energy. Part of this work was also supported by the Center for Manufacturing Research, Tennessee Technological University (TTU) and by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of FreedomCAR and Vehicle Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the U.S. Department of Energy under contract # DE-AC05-00OR22725.

Funders	Funder number
Center for Manufacturing Research
Division of Materials Science
Office of Basic Energy Sciences	0203010
Office of FreedomCar
Tennessee Technological University
UT-Battelle	DE-AC05-00OR22725
National Science Foundation	DMR-0238113
U.S. Department of Energy
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory

Keywords

Porous substrate
SOFC
Sol-gel technique
Spin coating
YSZ film

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.surfcoat.2005.07.083

Cite this

@article{45d4af8a7b6b4cf7880319f98aa5e41a,

title = "Processing of YSZ thin films on dense and porous substrates",

abstract = "Yttria-stabilized zirconia (YSZ) thin films with a Zr/Y molar ratio of 0.84:0.16 were synthesized on both dense Si substrates and porous Ni-YSZ anodes using the spin coating technique. Two polymeric precursors were used to process the YSZ films on the Si substrates. The first one utilized a commercial precursor, with butanol added as the diluting solvent. By controlling the content of butanol in the solution, dense and crack-free YSZ films with thickness of 500 nm were obtained after 8 coating runs with a final anneal of 700 °C for 4 h. X-ray diffraction was used to monitor the crystallization process in the films during annealing, which indicated that the YSZ films started to crystallize at 300-400 °C and became fully crystalline with a cubic structure at temperature ≥600 °C. In the second case, a new YSZ polymeric precursor was prepared and used for coating. It was found that the viscosity of the precursor solution is critical in controlling the film quality. Relatively thick, dense YSZ films were also synthesized on porous Ni-YSZ anode substrates using a combined colloidal-polymer method.",

keywords = "Porous substrate, SOFC, Sol-gel technique, Spin coating, YSZ film",

author = "Y. Pan and Zhu, {J. H.} and Hu, {M. Z.} and Payzant, {E. A.}",

year = "2005",

month = nov,

day = "21",

doi = "10.1016/j.surfcoat.2005.07.083",

language = "English",

volume = "200",

pages = "1242--1247",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

number = "5-6",

}

TY - JOUR

T1 - Processing of YSZ thin films on dense and porous substrates

AU - Pan, Y.

AU - Zhu, J. H.

AU - Hu, M. Z.

AU - Payzant, E. A.

PY - 2005/11/21

Y1 - 2005/11/21

N2 - Yttria-stabilized zirconia (YSZ) thin films with a Zr/Y molar ratio of 0.84:0.16 were synthesized on both dense Si substrates and porous Ni-YSZ anodes using the spin coating technique. Two polymeric precursors were used to process the YSZ films on the Si substrates. The first one utilized a commercial precursor, with butanol added as the diluting solvent. By controlling the content of butanol in the solution, dense and crack-free YSZ films with thickness of 500 nm were obtained after 8 coating runs with a final anneal of 700 °C for 4 h. X-ray diffraction was used to monitor the crystallization process in the films during annealing, which indicated that the YSZ films started to crystallize at 300-400 °C and became fully crystalline with a cubic structure at temperature ≥600 °C. In the second case, a new YSZ polymeric precursor was prepared and used for coating. It was found that the viscosity of the precursor solution is critical in controlling the film quality. Relatively thick, dense YSZ films were also synthesized on porous Ni-YSZ anode substrates using a combined colloidal-polymer method.

AB - Yttria-stabilized zirconia (YSZ) thin films with a Zr/Y molar ratio of 0.84:0.16 were synthesized on both dense Si substrates and porous Ni-YSZ anodes using the spin coating technique. Two polymeric precursors were used to process the YSZ films on the Si substrates. The first one utilized a commercial precursor, with butanol added as the diluting solvent. By controlling the content of butanol in the solution, dense and crack-free YSZ films with thickness of 500 nm were obtained after 8 coating runs with a final anneal of 700 °C for 4 h. X-ray diffraction was used to monitor the crystallization process in the films during annealing, which indicated that the YSZ films started to crystallize at 300-400 °C and became fully crystalline with a cubic structure at temperature ≥600 °C. In the second case, a new YSZ polymeric precursor was prepared and used for coating. It was found that the viscosity of the precursor solution is critical in controlling the film quality. Relatively thick, dense YSZ films were also synthesized on porous Ni-YSZ anode substrates using a combined colloidal-polymer method.

KW - Porous substrate

KW - SOFC

KW - Sol-gel technique

KW - Spin coating

KW - YSZ film

UR - http://www.scopus.com/inward/record.url?scp=28844472568&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2005.07.083

DO - 10.1016/j.surfcoat.2005.07.083

M3 - Article

AN - SCOPUS:28844472568

SN - 0257-8972

VL - 200

SP - 1242

EP - 1247

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 5-6

ER -

Processing of YSZ thin films on dense and porous substrates

Abstract

Funding

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this