Abstract
Studying the interplay of electron correlation and topology is crucial for discovering new quantum states, such as the fractional quantum spin Hall effect and topological superconductors. Unlike linear transport, nonlinear electrical responses, which encode both symmetry and topological features remain largely unexplored in systems with electron correlation and topology. Here we report that nonlinear Hall measurements reveal the emergence of a correlated state in few-layer topological semimetal TaIrTe₄ below a critical temperature and bias current. This state, exhibiting ultra large nonlinear conductivity, is attributed to the formation of a charge density wave in TaIrTe4 that leads to substantial Berry curvature redistribution. This origin is further supported by the observation of a Raman amplitude mode associated with the charge density wave, enhanced second harmonic generation, and first-principles calculations. Our findings demonstrate that nonlinear electrical probes can access rich phase diagrams in topological materials and highlight the potential of correlated topological systems for developing nonlinear electronics.
| Original language | English |
|---|---|
| Article number | 6351 |
| Journal | Nature Communications |
| Volume | 16 |
| Issue number | 1 |
| DOIs | |
| State | Published - Dec 2025 |
Funding
H.J., H.M., and Y.W. acknowledge support from the Department of Energy Office of Basic Energy Sciences through grant DE-SC0024176 (Device fabrication, transport, optical measurement). T.X. and J.X. acknowledge support from the Office of Naval Research through contract No. N00014-24−1−2068 (Optical measurement). J.L. was primarily supported by the National Science Foundation Materials Research Science and Engineering Center program through the UT Knoxville Center for Advanced Materials and Manufacturing under grant DMR-2309083 (theory modeling). Y.Z. was supported by the start-up fund at University of Tennessee. D.R., Y.H., and Y.M. are supported by National Science Foundation through the University of Wisconsin Materials Research Science and Engineering Center under grant No. DMR-2309000 (Growth of TaIrTe crystal and device fabrication). K.W. and T.T. acknowledge support from the JSPS KAKENHI (grant No. 21H05233 and 23H02052), the CREST (JPMJCR24A5), JST and World Premier International Research Center Initiative (WPI), MEXT, Japan (Growth of BN crystal). 4 H.J., H.M., and Y.W. acknowledge support from the Department of Energy Office of Basic Energy Sciences through grant DE-SC0024176 (Device fabrication, transport, optical measurement). T.X. and J.X. acknowledge support from the Office of Naval Research through contract No. N00014-24−1−2068 (Optical measurement). J.L. was primarily supported by the National Science Foundation Materials Research Science and Engineering Center program through the UT Knoxville Center for Advanced Materials and Manufacturing under grant DMR-2309083 (theory modeling). Y.Z. was supported by the start-up fund at University of Tennessee. D.R., Y.H., and Y.M. are supported by National Science Foundation through the University of Wisconsin Materials Research Science and Engineering Center under grant No. DMR-2309000 (Growth of TaIrTe4 crystal and device fabrication). K.W. and T.T. acknowledge support from the JSPS KAKENHI (grant No. 21H05233 and 23H02052), the CREST (JPMJCR24A5), JST and World Premier International Research Center Initiative (WPI), MEXT, Japan (Growth of BN crystal).