Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

S. Roy; A. M. Kamerbeek; K. G. Rana; S. Parui; T. Banerjee

doi:10.1063/1.4807017

Probing hot electron transport across an epitaxial Schottky interface of SrRuO₃/Nb:SrTiO₃

S. Roy, A. M. Kamerbeek, K. G. Rana, S. Parui, T. Banerjee

Carbon and Composites

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Abstract

SrRuO₃ (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO₃. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO ₃ (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.

Original language	English
Article number	192909
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4807017
State	Published - May 13 2013

Funding

We thank B. Noheda and T. T. M. Palstra for use of the Pulsed Laser Deposition system. Technical support from J. Baas and J. G. Holstein is thankfully acknowledged. We also acknowledge useful discussions with Y. Hikita and H. Y. Hwang. This work was supported by the Netherlands Organization for Scientific Research NWO-FOM (nano) and VIDI program and the Rosalind Franklin Fellowship.

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abstract = "SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO 3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.",

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AU - Banerjee, T.

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AB - SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO 3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.

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Probing hot electron transport across an epitaxial Schottky interface of SrRuO₃/Nb:SrTiO₃

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