Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

S. Roy; A. M. Kamerbeek; K. G. Rana; S. Parui; T. Banerjee

doi:10.1063/1.4807017

Probing hot electron transport across an epitaxial Schottky interface of SrRuO₃/Nb:SrTiO₃

S. Roy, A. M. Kamerbeek, K. G. Rana, S. Parui, T. Banerjee

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

SrRuO₃ (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO₃. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO ₃ (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.

Original language	English
Article number	192909
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4807017
State	Published - May 13 2013
Externally published	Yes

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abstract = "SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO 3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.",

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AU - Parui, S.

AU - Banerjee, T.

PY - 2013/5/13

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AB - SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO 3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.

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ER -

Probing hot electron transport across an epitaxial Schottky interface of SrRuO₃/Nb:SrTiO₃

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