Abstract
The ability to tailor a material's electronic properties using density driven disordering has emerged as a powerful route to materials design. The observation of anomalous structural and electronic behavior in the rutile to CaCl2 phase transition in SnO2 led to the prediction that such behavior is inherent to all oxides experiencing such a phase transition sequence [Smith et al., J. Phys. Chem. Lett. 10, 5351 (2019)1948-718510.1021/acs.jpclett.9b01633]. Here, the ultrawide band gap semiconductor GeO2 is confirmed to exhibit anomalous behavior during the rutile to CaCl2 phase transition. A phase pure rutile GeO2 sample synthesized under high-pressure, high-temperature conditions is probed using synchrotron diffraction and x-ray and optical spectroscopy under high pressure conditions. Density functional theory calculations show that the enthalpic barrier to displacing an oxygen along the B1g librational mode decreases with pressure leading up to the rutile to CaCl2 phase transition. The band structure of the distorted state shows that such oxygen displacements form small polarons.
| Original language | English |
|---|---|
| Article number | 134107 |
| Journal | Physical Review B |
| Volume | 104 |
| Issue number | 13 |
| DOIs | |
| State | Published - Oct 1 2021 |
| Externally published | Yes |
Funding
This material is based upon work supported by the Air Force Office of Scientific Research under Award Number FA9550-21-1-0097. Portions of this work were performed at HPCAT (Sector 16), Advanced Photon Source (APS), Argonne National Laboratory. HPCAT operations are supported by DOE-NNSA's Office of Experimental Sciences. The Advanced Photon Source is a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. The authors thank the UNLV National Supercomputing Institute for computational resources and support.