Pressure-induced structures of Si-doped HfO2

Chris M. Fancher, Lili Zhao, Matthew Nelson, Ligang Bai, Guoyin Shen, Jacob L. Jones

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11 Scopus citations

Abstract

The effect of hydrostatic pressure on the structure of Si-doped HfO2 (Si:HfO2) was studied by using a diamond anvil cell in combination with high-energy X-ray diffraction at a synchrotron source. Diffraction data were measured in situ during compression up to pressures of 31 GPa. Si:HfO2 with 3, 5, and 9 at. % Si were found to undergo a monoclinic to orthorhombic transition at pressures between 7 and 15 GPa. Whole pattern analysis was carried out using nonpolar (Pbca) and polar (Pca21) crystallographic models to investigate the symmetry of the observed high-pressure orthorhombic phase. Rietveld refinement results cannot discriminate a reliable difference between the Pbca and Pca21 structures as they nearly equally model the measured diffraction data. The pressure dependent lattice parameters, relative volume, and spontaneous strain are reported.

Original languageEnglish
Article number234102
JournalJournal of Applied Physics
Volume117
Issue number23
DOIs
StatePublished - Jun 21 2015
Externally publishedYes

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