Abstract
The effect of hydrostatic pressure on the structure of Si-doped HfO2 (Si:HfO2) was studied by using a diamond anvil cell in combination with high-energy X-ray diffraction at a synchrotron source. Diffraction data were measured in situ during compression up to pressures of 31 GPa. Si:HfO2 with 3, 5, and 9 at. % Si were found to undergo a monoclinic to orthorhombic transition at pressures between 7 and 15 GPa. Whole pattern analysis was carried out using nonpolar (Pbca) and polar (Pca21) crystallographic models to investigate the symmetry of the observed high-pressure orthorhombic phase. Rietveld refinement results cannot discriminate a reliable difference between the Pbca and Pca21 structures as they nearly equally model the measured diffraction data. The pressure dependent lattice parameters, relative volume, and spontaneous strain are reported.
| Original language | English |
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| Article number | 234102 |
| Journal | Journal of Applied Physics |
| Volume | 117 |
| Issue number | 23 |
| DOIs | |
| State | Published - Jun 21 2015 |
| Externally published | Yes |