Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

Seung Hyun Kim; Dong Joo Kim; S. K. Streiffer; A. I. Kingon

doi:10.1557/JMR.1999.0332

Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

Seung Hyun Kim, Dong Joo Kim, S. K. Streiffer, A. I. Kingon

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Mixed composition layered lead zirconate titanate (PZT) films (Zr/Ti ratio = 30/70 + 65/35) with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (111) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt electrodes; the retained polarization of the modified film was above 50% after fatigue testing to 10⁹ cycles, and the thermally induced voltage shifts (Δ V) were 0.51 V after heating at 150°C for 4410 s, two times lower than for films without a stoichiometric thin layer.

Original language	English
Pages (from-to)	2476-2483
Number of pages	8
Journal	Journal of Materials Research
Volume	14
Issue number	6
DOIs	https://doi.org/10.1557/JMR.1999.0332
State	Published - Jun 1999
Externally published	Yes

Funding

This work was supported by Ramtron Corporation. A gift from LG Semicon is gratefully acknowledged. Useful discussions with other members of the Kingon research group are also gratefully acknowledged.

Funders	Funder number
Ramtron Corporation

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10.1557/JMR.1999.0332

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title = "Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications",

abstract = "Mixed composition layered lead zirconate titanate (PZT) films (Zr/Ti ratio = 30/70 + 65/35) with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (111) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt electrodes; the retained polarization of the modified film was above 50% after fatigue testing to 109 cycles, and the thermally induced voltage shifts (Δ V) were 0.51 V after heating at 150°C for 4410 s, two times lower than for films without a stoichiometric thin layer.",

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T1 - Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

AU - Kim, Seung Hyun

AU - Kim, Dong Joo

AU - Streiffer, S. K.

AU - Kingon, A. I.

PY - 1999/6

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N2 - Mixed composition layered lead zirconate titanate (PZT) films (Zr/Ti ratio = 30/70 + 65/35) with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (111) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt electrodes; the retained polarization of the modified film was above 50% after fatigue testing to 109 cycles, and the thermally induced voltage shifts (Δ V) were 0.51 V after heating at 150°C for 4410 s, two times lower than for films without a stoichiometric thin layer.

AB - Mixed composition layered lead zirconate titanate (PZT) films (Zr/Ti ratio = 30/70 + 65/35) with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (111) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt electrodes; the retained polarization of the modified film was above 50% after fatigue testing to 109 cycles, and the thermally induced voltage shifts (Δ V) were 0.51 V after heating at 150°C for 4410 s, two times lower than for films without a stoichiometric thin layer.

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Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

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