Preparation and characterization of some alumosiloxanes as single-source MOCVD precursors for aluminosilicate coatings

S. M. Zemskova; J. A. Haynes; T. M. Besmann; R. D. Hunt; D. B. Beach; V. N. Golovlev

doi:10.1051/jp4:2000205

Preparation and characterization of some alumosiloxanes as single-source MOCVD precursors for aluminosilicate coatings

S. M. Zemskova, J. A. Haynes, T. M. Besmann, R. D. Hunt, D. B. Beach, V. N. Golovlev

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Alumosiloxanes [Al(OSiMe₃)₃]₂, (Me₃SiO)₂Al[OSi(OBu-t)₃], [(acac)Al(OSiMe₃)₂]₂, (Ox)Al[OSi(OBu-t)₃]₂, (Me=CH₃; Bu-t= t-C₄H₉; acac = C₅H₇O₂; Ox = C₉H₆NO) have been synthesized and their thermal properties have been studied by thermogravimetric analysis in Ar over the temperature range of 25-500°C. The compounds [Al(OSiMe₃)₃]₂ and [(acac)Al(OSiMe₃)₂]₂ showed substantial volatility during heating regardless of their dimeric structures in the solid state; while the other compounds were largely decomposed under the same conditions. Therefore, [Al(OSiMe₃)₃]₂ and [(acac)Al(OSiMe₃)₂]₂ have been chosen as prospective precursors for the MOCVD of aluminosilicate coatings. Investigation of these compounds by laser mass-spectrometry (laser excitation at 355nm) has shown that the decomposition pathway proceeds through the formation of a number of heavy species originating from dimeric [>Al<(OSi)₂>Al<] fragments of [Al(OSiMe₃)₃]₂ and [(acac)Al(OSiMe₃)₂]₂ molecules and silicon-containing light species of m/z 52 (C₂Si) and 55(C₂H₃Si) originating from OSiMe₃ ligands. Initial experiments have been carried out on the deposition of aluminosilicate coatings on silicon carbide from the precursors described.

Original language	English
Pages (from-to)	Pr2-35 - Pr2-42
Journal	Journal De Physique. IV : JP
Volume	10
Issue number	2
DOIs	https://doi.org/10.1051/jp4:2000205
State	Published - 2000
Event	The 12th European Conference on Chemical Vapour Deposition (EUROCVD 12) - Barcelona, Spain Duration: Sep 5 1999 → Sep 10 1999

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@article{97915a0daefa4e36b84b8b78d531f186,

title = "Preparation and characterization of some alumosiloxanes as single-source MOCVD precursors for aluminosilicate coatings",

abstract = "Alumosiloxanes [Al(OSiMe3)3]2, (Me3SiO)2Al[OSi(OBu-t)3], [(acac)Al(OSiMe3)2]2, (Ox)Al[OSi(OBu-t)3]2, (Me=CH3; Bu-t= t-C4H9; acac = C5H7O2; Ox = C9H6NO) have been synthesized and their thermal properties have been studied by thermogravimetric analysis in Ar over the temperature range of 25-500°C. The compounds [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 showed substantial volatility during heating regardless of their dimeric structures in the solid state; while the other compounds were largely decomposed under the same conditions. Therefore, [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 have been chosen as prospective precursors for the MOCVD of aluminosilicate coatings. Investigation of these compounds by laser mass-spectrometry (laser excitation at 355nm) has shown that the decomposition pathway proceeds through the formation of a number of heavy species originating from dimeric [>Al<(OSi)2>Al<] fragments of [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 molecules and silicon-containing light species of m/z 52 (C2Si) and 55(C2H3Si) originating from OSiMe3 ligands. Initial experiments have been carried out on the deposition of aluminosilicate coatings on silicon carbide from the precursors described.",

author = "Zemskova, {S. M.} and Haynes, {J. A.} and Besmann, {T. M.} and Hunt, {R. D.} and Beach, {D. B.} and Golovlev, {V. N.}",

year = "2000",

doi = "10.1051/jp4:2000205",

language = "English",

volume = "10",

pages = "Pr2--35 -- Pr2--42",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

number = "2",

note = "The 12th European Conference on Chemical Vapour Deposition (EUROCVD 12) ; Conference date: 05-09-1999 Through 10-09-1999",

}

TY - JOUR

T1 - Preparation and characterization of some alumosiloxanes as single-source MOCVD precursors for aluminosilicate coatings

AU - Zemskova, S. M.

AU - Haynes, J. A.

AU - Besmann, T. M.

AU - Hunt, R. D.

AU - Beach, D. B.

AU - Golovlev, V. N.

PY - 2000

Y1 - 2000

N2 - Alumosiloxanes [Al(OSiMe3)3]2, (Me3SiO)2Al[OSi(OBu-t)3], [(acac)Al(OSiMe3)2]2, (Ox)Al[OSi(OBu-t)3]2, (Me=CH3; Bu-t= t-C4H9; acac = C5H7O2; Ox = C9H6NO) have been synthesized and their thermal properties have been studied by thermogravimetric analysis in Ar over the temperature range of 25-500°C. The compounds [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 showed substantial volatility during heating regardless of their dimeric structures in the solid state; while the other compounds were largely decomposed under the same conditions. Therefore, [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 have been chosen as prospective precursors for the MOCVD of aluminosilicate coatings. Investigation of these compounds by laser mass-spectrometry (laser excitation at 355nm) has shown that the decomposition pathway proceeds through the formation of a number of heavy species originating from dimeric [>Al<(OSi)2>Al<] fragments of [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 molecules and silicon-containing light species of m/z 52 (C2Si) and 55(C2H3Si) originating from OSiMe3 ligands. Initial experiments have been carried out on the deposition of aluminosilicate coatings on silicon carbide from the precursors described.

AB - Alumosiloxanes [Al(OSiMe3)3]2, (Me3SiO)2Al[OSi(OBu-t)3], [(acac)Al(OSiMe3)2]2, (Ox)Al[OSi(OBu-t)3]2, (Me=CH3; Bu-t= t-C4H9; acac = C5H7O2; Ox = C9H6NO) have been synthesized and their thermal properties have been studied by thermogravimetric analysis in Ar over the temperature range of 25-500°C. The compounds [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 showed substantial volatility during heating regardless of their dimeric structures in the solid state; while the other compounds were largely decomposed under the same conditions. Therefore, [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 have been chosen as prospective precursors for the MOCVD of aluminosilicate coatings. Investigation of these compounds by laser mass-spectrometry (laser excitation at 355nm) has shown that the decomposition pathway proceeds through the formation of a number of heavy species originating from dimeric [>Al<(OSi)2>Al<] fragments of [Al(OSiMe3)3]2 and [(acac)Al(OSiMe3)2]2 molecules and silicon-containing light species of m/z 52 (C2Si) and 55(C2H3Si) originating from OSiMe3 ligands. Initial experiments have been carried out on the deposition of aluminosilicate coatings on silicon carbide from the precursors described.

UR - http://www.scopus.com/inward/record.url?scp=0034140395&partnerID=8YFLogxK

U2 - 10.1051/jp4:2000205

DO - 10.1051/jp4:2000205

M3 - Conference article

AN - SCOPUS:0034140395

SN - 1155-4339

VL - 10

SP - Pr2-35 - Pr2-42

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 2

T2 - The 12th European Conference on Chemical Vapour Deposition (EUROCVD 12)

Y2 - 5 September 1999 through 10 September 1999

ER -

Preparation and characterization of some alumosiloxanes as single-source MOCVD precursors for aluminosilicate coatings

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