Abstract
Supported by prior lattice-gas and phase-field simulations, we proposed that nanoscale intergranular and surficial amorphous films in multicomponent ceramic materials can be treated as a case of combined interfacial prewetting and premelting. Consequently, a class of parallel interfacial phenomena, i.e., coupled interfacial adsorption and disordering, is anticipated to occur in multicomponent metallic alloys. An exploratory study was carried out wherein grain boundary segregation in a model binary metallic alloy (Ni-doped W) was characterized as a function of temperature and dopant concentration. Doped specimens were prepared using high purity chemicals, sintered in flowing H 2/N 2 mixture, and examined using Auger spectroscopy and electron microscopy. Preliminary results are presented and discussed with respect to a prewetting/premelting model versus the classical Langmuir-McLean and BET models. An additional goal of this study is to resolve the long-standing mystery of solid-state activated sintering mechanism for nickel-doped tungsten. Use of ultra-pure materials confirmed the occurrence of nickel activated sintering of tungsten in the solid-state. We demonstrated that, contrary to the previous belief, Ni-rich secondary bulk phase does not penetrate along GBs and the solid-state activator should be a nanoscale interfacial phase that does not appear in the bulk phase diagram. The solid-state activated sintering in the model metallic system Ni-doped W is therefore attributed to the enhanced diffusion in a coupled grain boundary disordering and adsorption region, analogous to activated sintering via accelerated mass transport in nanoscale intergranular and surficial amorphous film in the model oxide system Bi 2O 3-doped ZnO.
Original language | English |
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Pages (from-to) | 159-174 |
Number of pages | 16 |
Journal | Ceramic Transactions |
Volume | 172 |
State | Published - 2006 |
Externally published | Yes |
Event | 107th Annual Meeting of the American Ceramic Society - Baltimore, MD, United States Duration: Apr 10 2005 → Apr 13 2005 |