Abstract
Organometallic halide perovskite (OMHPs) single crystals have recently gained attention for high-energy radiation detection due to their low trap state densities, high bulk resistivities, excellent stopping power and cost-effective solution growth. An integral focus for radiation sensing materials is the reduction of trap states to enhance charge transport properties. In this perspective, we investigate the use of high and low purity precursors for growth to understand impurity inclusion, as well as effects on structural properties due to impurities. Using both high purity and low purity precursors, we report minimal effects on impurity inclusion observed via Raman, ToF-SIMS and X-ray diffraction. Through SEM analysis, we observe that the particle size in the grown single crystal increased on average by a factor of two to five, when using high purity precursors. The microstructural changes affect the recombination mechanisms, promoting longer charge carrier lifetimes (τavg), where time-resolved photoluminescence shows a large increase from τavg = 1.26 × 10-6 s (low purity) to τavg = 1.18 × 10-4 s (high purity). We further investigate the purity effects with alpha radiation detection, demonstrating charge collection efficiency and observing an increase in charge collection by 32 ± 30% using the higher purity precursors. The microstructural differences in growth are herein proposed to be caused by nucleation from the impurities present in the solution, thereby adversely affecting the electronic properties of the MAPbBr3 single crystals. In this perspective, we provide a deeper understanding of the effects of precursor purity on solution-based single crystal growth of OMHPs towards development of efficient radiation sensors and optoelectronic devices.
Original language | English |
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Pages (from-to) | 7818-7825 |
Number of pages | 8 |
Journal | CrystEngComm |
Volume | 20 |
Issue number | 48 |
DOIs | |
State | Published - 2018 |
Funding
This research was conducted at the Joint Institute for Advanced Materials at the University of Tennessee. Part of this research was conducted at the Center for Nanophase Materials Sciences based on user project (CNMS2017-102), which is sponsored by Oak Ridge National Laboratory by the Division of Scientific User Facilities, U.S. Department of Energy. ToF-SIMS measurements were conducted using instrumentation within ORNL's Materials Characterization Core provided by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. XRD was performed at the Joint Institute for Advanced Materials (JIAM) Diffraction Facility, located at the University of Tennessee, Knoxville. Part of this research was financially supported by the Center for Materials Processing, a Center of Excellence at the University of Tennessee, Knoxville funded by the Tennessee Higher Education Commission (THEC). This material is based upon work supported by the U.S. Department of Homeland Security under Grant Award Number 2016-DN-077-ARI01.
Funders | Funder number |
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Division of Scientific User Facilities | |
Tennessee Higher Education Commission | |
UT-Battelle, LLC | |
U.S. Department of Energy | |
U.S. Department of Homeland Security | 2016-DN-077-ARI01 |
Oak Ridge National Laboratory | |
University of Tennessee |