TY - GEN
T1 - Power scaling and beam divergence compression of bottom-emitting vertical-cavity surface-emitting lasers
AU - Zhang, Xing
AU - Ning, Yongqiang
AU - Zhang, Jianwei
AU - Zhang, Jinsheng
AU - Jia, Peng
AU - Li, Xiushan
AU - Shi, Jingjing
AU - Qin, Li
AU - Liu, Yun
AU - Tong, Cunzhu
AU - Wang, Lijun
PY - 2013
Y1 - 2013
N2 - Power scaling and beam divergence compression of 980 nm bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) are presented in this paper. First, the relationships among the reflectivity of the n-doped distributed Bragg reflector, threshold current, and output power were analyzed, and the n-DBR reflectivity was optimized to achieve higher slope efficiency in a relatively low threshold current. Second, the influence of the p-contact on the current density distribution inside the active region was analyzed using the three-dimensional finite-element method. Uniform current distribution was achieved by optimizing the diameter of the p-contact, and a consequent improvement in beam divergence was observed. A low divergence of 5.4° was obtained for a single device with continuous-wave (CW) of 1.46 W at room temperature. The 8×8 VCSEL array showed a divergence angle of 10.2° at 4A. This array afforded a CW output power of 1.95 W under an injected current of 4 A and a pulse output power of 115 W under a pulse drive current of 130 A, a pulse width of 100 ns, and a repetition frequency of 100 Hz. VCSEL array chips were packaged in series to form a 'quasi-array to further increase the output power. This series achieved a peak output power of 475 W under a pulse drive current of 120 A.
AB - Power scaling and beam divergence compression of 980 nm bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) are presented in this paper. First, the relationships among the reflectivity of the n-doped distributed Bragg reflector, threshold current, and output power were analyzed, and the n-DBR reflectivity was optimized to achieve higher slope efficiency in a relatively low threshold current. Second, the influence of the p-contact on the current density distribution inside the active region was analyzed using the three-dimensional finite-element method. Uniform current distribution was achieved by optimizing the diameter of the p-contact, and a consequent improvement in beam divergence was observed. A low divergence of 5.4° was obtained for a single device with continuous-wave (CW) of 1.46 W at room temperature. The 8×8 VCSEL array showed a divergence angle of 10.2° at 4A. This array afforded a CW output power of 1.95 W under an injected current of 4 A and a pulse output power of 115 W under a pulse drive current of 130 A, a pulse width of 100 ns, and a repetition frequency of 100 Hz. VCSEL array chips were packaged in series to form a 'quasi-array to further increase the output power. This series achieved a peak output power of 475 W under a pulse drive current of 120 A.
KW - Beam divergence
KW - Current density distribution
KW - DBR reflectivity optimization
KW - Power scaling
KW - Vertical-cavity surface-emitting lasers
UR - http://www.scopus.com/inward/record.url?scp=84888168479&partnerID=8YFLogxK
U2 - 10.1117/12.2032046
DO - 10.1117/12.2032046
M3 - Conference contribution
AN - SCOPUS:84888168479
SN - 9780819497734
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - International Symposium on Photoelectronic Detection and Imaging 2013
T2 - 5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013
Y2 - 25 June 2013 through 27 June 2013
ER -