Power losses and thermal modeling of a 4H-SiC VJFET inverter

Hui Zhang; Leon M. Tolbert; Burak Ozpineci; Madhu S. Chinthavali

doi:10.1109/IAS.2005.1518831

Power losses and thermal modeling of a 4H-SiC VJFET inverter

Hui Zhang, Leon M. Tolbert, Burak Ozpineci, Madhu S. Chinthavali

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

This paper presents a set of models for a SiC VJFET inverter from device level to system level. The simulations for SiC and Si inverters indicated that the SiC inverter has a much lower junction temperature, much less power loss, significantly enhanced energy efficiency, and a dramatic reduction in heatsink size as compared with the Si inverter. This demonstrated the technical feasibility and benefits of the all-SiC inverter. In addition to the simulations, experimental tests have also been conducted on SiC VJFETs and Schottky diodes for parameter extraction.

Original language	English
Title of host publication	Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting
Pages	2630-2634
Number of pages	5
DOIs	https://doi.org/10.1109/IAS.2005.1518831
State	Published - 2005
Event	2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting - Kowloon, Hong Kong, China Duration: Oct 2 2005 → Oct 6 2005

Publication series

Name	Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Volume	4
ISSN (Print)	0197-2618

Conference

Conference	2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting
Country/Territory	China
City	Kowloon, Hong Kong
Period	10/2/05 → 10/6/05

Keywords

Inverter
Power loss modeling
Schottky diode
Silicon Carbide (SiC)
Thermal modeling
VJFET

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10.1109/IAS.2005.1518831

Cite this

Zhang, H., Tolbert, L. M., Ozpineci, B., & Chinthavali, M. S. (2005). Power losses and thermal modeling of a 4H-SiC VJFET inverter. In Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting (pp. 2630-2634). Article 1518831 (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society); Vol. 4). https://doi.org/10.1109/IAS.2005.1518831

@inproceedings{d40396e760fd4c51bc4fffb17c61d55b,

title = "Power losses and thermal modeling of a 4H-SiC VJFET inverter",

abstract = "This paper presents a set of models for a SiC VJFET inverter from device level to system level. The simulations for SiC and Si inverters indicated that the SiC inverter has a much lower junction temperature, much less power loss, significantly enhanced energy efficiency, and a dramatic reduction in heatsink size as compared with the Si inverter. This demonstrated the technical feasibility and benefits of the all-SiC inverter. In addition to the simulations, experimental tests have also been conducted on SiC VJFETs and Schottky diodes for parameter extraction.",

keywords = "Inverter, Power loss modeling, Schottky diode, Silicon Carbide (SiC), Thermal modeling, VJFET",

author = "Hui Zhang and Tolbert, {Leon M.} and Burak Ozpineci and Chinthavali, {Madhu S.}",

year = "2005",

doi = "10.1109/IAS.2005.1518831",

language = "English",

isbn = "0780392086",

series = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",

pages = "2630--2634",

booktitle = "Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting",

note = "2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting ; Conference date: 02-10-2005 Through 06-10-2005",

}

Zhang, H, Tolbert, LM, Ozpineci, B & Chinthavali, MS 2005, Power losses and thermal modeling of a 4H-SiC VJFET inverter. in Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting., 1518831, Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), vol. 4, pp. 2630-2634, 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting, Kowloon, Hong Kong, China, 10/2/05. https://doi.org/10.1109/IAS.2005.1518831

Power losses and thermal modeling of a 4H-SiC VJFET inverter. / Zhang, Hui; Tolbert, Leon M.; Ozpineci, Burak et al.
Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting. 2005. p. 2630-2634 1518831 (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society); Vol. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Power losses and thermal modeling of a 4H-SiC VJFET inverter

AU - Zhang, Hui

AU - Tolbert, Leon M.

AU - Ozpineci, Burak

AU - Chinthavali, Madhu S.

PY - 2005

Y1 - 2005

N2 - This paper presents a set of models for a SiC VJFET inverter from device level to system level. The simulations for SiC and Si inverters indicated that the SiC inverter has a much lower junction temperature, much less power loss, significantly enhanced energy efficiency, and a dramatic reduction in heatsink size as compared with the Si inverter. This demonstrated the technical feasibility and benefits of the all-SiC inverter. In addition to the simulations, experimental tests have also been conducted on SiC VJFETs and Schottky diodes for parameter extraction.

AB - This paper presents a set of models for a SiC VJFET inverter from device level to system level. The simulations for SiC and Si inverters indicated that the SiC inverter has a much lower junction temperature, much less power loss, significantly enhanced energy efficiency, and a dramatic reduction in heatsink size as compared with the Si inverter. This demonstrated the technical feasibility and benefits of the all-SiC inverter. In addition to the simulations, experimental tests have also been conducted on SiC VJFETs and Schottky diodes for parameter extraction.

KW - Inverter

KW - Power loss modeling

KW - Schottky diode

KW - Silicon Carbide (SiC)

KW - Thermal modeling

KW - VJFET

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DO - 10.1109/IAS.2005.1518831

M3 - Conference contribution

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T3 - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

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BT - Conference Record of the 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting

T2 - 2005 IEEE Industry Applications Conference, 40th IAS Annual Meeting

Y2 - 2 October 2005 through 6 October 2005

ER -

Power losses and thermal modeling of a 4H-SiC VJFET inverter

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