Abstract
The potential distribution and field intensity for a hyperboloid probe in a uniform field were calculated. Evaluation was done as function of the dielectric constant of the medium filling the space between the tip and the surface and as function of the hyperboloidal shape parameters. The probe was modeled as a dielectric medium with the geometry of a one sheeted hyperboloid of revolution. The probe was located above a charged substrate surface which was modeled as a dielectric half space interfaced with a uniform surface charge density. Comparisons were made with the case of a dielectric spheroidal body.
| Original language | English |
|---|---|
| Pages (from-to) | 76-80 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2002 |
| Event | 6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Napa Valley, CA, United States Duration: Apr 22 2001 → Apr 26 2001 |