Post implantation treatment of silicon carbide-based sensors for hydrogen detection properties enhancement

I. C. Muntele, C. I. Muntele, D. Ila, R. L. Zimmerman, D. B. Poker, D. K. Hensley

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Palladium ion implantation was performed at energies of 35 keV, 50 keV and 100 keV, at both room temperature (RT) and 500°C, on two identical sets of 6H, n-type silicon carbide samples. Then, one set of samples was subjected to a post-implantation sputtering process, in order to eliminate the substrate layer damaged by the palladium ions during implantation. Electrical and micro-Raman measurements have been performed on both sets of samples, aiming for a better understanding of the chemical processes that take place in the presence of hydrogen atmosphere in the chemical sensors prepared this way.

Original languageEnglish
Pages (from-to)O5.15.1-O5.15.6
JournalMaterials Research Society Symposium - Proceedings
Volume647
StatePublished - 2001
Externally publishedYes
EventIon Beam Synthesis and Processing of Advanced Materials - Boston, MA, United States
Duration: Nov 27 2000Nov 29 2000

Funding

This research is sponsored by the NASA Grant No. NG3-2302, and partially by the Center for Irradiation of Materials of Alabama A&M University and the Division of Material Sciences, U. S. Dept. of Energy, under contract DE-AC05-00OR22725 with the Oak Ridge National Laboratory, managed by UT-Battelle, LLC.

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