Abstract
In this work, we demonstrate that by post-implantation bombardment of 2.0 MeV Au-implanted suprasil by MeV heavy ions such as silicon, one can assist the formation of Au nanoclusters. We will also demonstrate the relationship between the energy deposited in electronic excitations by the MeV Si ions in the Au-implanted layer with the size of these nanoclusters as well as with the optical absorption band due to formation of Au nanoclusters. The optical absorption band characteristic of the Au-implanted suprasil as well as the TEM results were used to monitor the formation of the metallic clusters before and after post-implantation bombardment.
Original language | English |
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Pages (from-to) | 1012-1016 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 148 |
Issue number | 1-4 |
DOIs | |
State | Published - 1999 |
Funding
This project was supported by the Center for Irradiation of Materials at Alabama A&M University and Alabama EPSCoR-NSF/ASIP Grant No. OSR-9559480. The work at ORNL was sponsored by the Division of Materials Science, US Department of Energy, under Contract DE-AC05-96OR22464 with Lockheed Martin Energy Research Corp.
Keywords
- Ion implantation
- Nanocluster
- Optical properties
- Radiation effects
- Silica