Positive temperature coefficient of resistance in MOCVD (Ba0.75Sr0.25)Ti1+yO3+z films

S. Saha; D. Y. Kaufman; S. K. Streiffer; R. A. Erck; O. Auciello

Positive temperature coefficient of resistance in MOCVD (Ba_0.75Sr_0.25)Ti_1+yO_3+z films

S. Saha, D. Y. Kaufman, S. K. Streiffer, R. A. Erck, O. Auciello

Research output: Contribution to journal › Conference article › peer-review

Abstract

The leakage and dielectric properties of a thickness series (90-480 nm) of {100} fiber-textured MOCVD (Ba_0.75Sr_0.25)Ti_1+yO_3+z (BST) thin films on Pt/SiO₂/Si were investigated. The temperature and voltage dependence of the permittivity were consistent with previous observations, where thinner films demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing film thickness. The current-voltage characteristics showed two distinct regimes. At low fields the current displayed weak field dependence and a monotonic increase with increasing temperature. In contrast, positive temperature coefficient of resistance (PTCR) was observed in the high-field leakage current behavior. The PTCR behavior was more pronounced for thicker BST films. Factors contributing to the observed PTCR effect are outlined and contrasted with the description for bulk BaTiO₃ ceramics.

Original language	English
Pages (from-to)	463-468
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	748
State	Published - 2003
Externally published	Yes
Event	Ferroelectric Thin Films XI - Boston, MA, United States Duration: Dec 2 2002 → Dec 5 2002

Cite this

@article{68309afb83a444e69a4668ea5c4e03d9,

title = "Positive temperature coefficient of resistance in MOCVD (Ba0.75Sr0.25)Ti1+yO3+z films",

abstract = "The leakage and dielectric properties of a thickness series (90-480 nm) of {100} fiber-textured MOCVD (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The temperature and voltage dependence of the permittivity were consistent with previous observations, where thinner films demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing film thickness. The current-voltage characteristics showed two distinct regimes. At low fields the current displayed weak field dependence and a monotonic increase with increasing temperature. In contrast, positive temperature coefficient of resistance (PTCR) was observed in the high-field leakage current behavior. The PTCR behavior was more pronounced for thicker BST films. Factors contributing to the observed PTCR effect are outlined and contrasted with the description for bulk BaTiO3 ceramics.",

author = "S. Saha and Kaufman, {D. Y.} and Streiffer, {S. K.} and Erck, {R. A.} and O. Auciello",

year = "2003",

language = "English",

volume = "748",

pages = "463--468",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Ferroelectric Thin Films XI ; Conference date: 02-12-2002 Through 05-12-2002",

}

TY - JOUR

T1 - Positive temperature coefficient of resistance in MOCVD (Ba0.75Sr0.25)Ti1+yO3+z films

AU - Saha, S.

AU - Kaufman, D. Y.

AU - Streiffer, S. K.

AU - Erck, R. A.

AU - Auciello, O.

PY - 2003

Y1 - 2003

N2 - The leakage and dielectric properties of a thickness series (90-480 nm) of {100} fiber-textured MOCVD (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The temperature and voltage dependence of the permittivity were consistent with previous observations, where thinner films demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing film thickness. The current-voltage characteristics showed two distinct regimes. At low fields the current displayed weak field dependence and a monotonic increase with increasing temperature. In contrast, positive temperature coefficient of resistance (PTCR) was observed in the high-field leakage current behavior. The PTCR behavior was more pronounced for thicker BST films. Factors contributing to the observed PTCR effect are outlined and contrasted with the description for bulk BaTiO3 ceramics.

AB - The leakage and dielectric properties of a thickness series (90-480 nm) of {100} fiber-textured MOCVD (Ba0.75Sr0.25)Ti1+yO3+z (BST) thin films on Pt/SiO2/Si were investigated. The temperature and voltage dependence of the permittivity were consistent with previous observations, where thinner films demonstrated a suppressed temperature and electric field response that transitioned to a more bulk-like response with increasing film thickness. The current-voltage characteristics showed two distinct regimes. At low fields the current displayed weak field dependence and a monotonic increase with increasing temperature. In contrast, positive temperature coefficient of resistance (PTCR) was observed in the high-field leakage current behavior. The PTCR behavior was more pronounced for thicker BST films. Factors contributing to the observed PTCR effect are outlined and contrasted with the description for bulk BaTiO3 ceramics.

UR - http://www.scopus.com/inward/record.url?scp=0038375264&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0038375264

SN - 0272-9172

VL - 748

SP - 463

EP - 468

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Ferroelectric Thin Films XI

Y2 - 2 December 2002 through 5 December 2002

ER -

Positive temperature coefficient of resistance in MOCVD (Ba_0.75Sr_0.25)Ti_1+yO_3+z films

Abstract

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