Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

Lin Zhou; David A. Cullen; David J. Smith; Martha R. McCartney; Anas Mouti; M. Gonschorek; E. Feltin; J. F. Carlin; N. Grandjean

doi:10.1063/1.3108084

Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

Lin Zhou
, David A. Cullen
, David J. Smith
, Martha R. McCartney
, Anas Mouti
, M. Gonschorek
, E. Feltin
, J. F. Carlin
, N. Grandjean

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.

Original language	English
Article number	121909
Journal	Applied Physics Letters
Volume	94
Issue number	12
DOIs	https://doi.org/10.1063/1.3108084
State	Published - 2009
Externally published	Yes

Funding

This work was supported by a contract from Wright Patterson Air Force Base (Monitor: C. Bozada) and the Swiss National Science Foundation (Contract No. 200021-107642/1). We acknowledge the use of facilities at John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

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title = "Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure",

abstract = "Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.",

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doi = "10.1063/1.3108084",

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T1 - Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

AU - Zhou, Lin

AU - Cullen, David A.

AU - Smith, David J.

AU - McCartney, Martha R.

AU - Mouti, Anas

AU - Gonschorek, M.

AU - Feltin, E.

AU - Carlin, J. F.

AU - Grandjean, N.

PY - 2009

Y1 - 2009

N2 - Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.

AB - Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85 In0.15 N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within the AlN layer. A two-dimensional electron gas with a density of ∼2.1× 1013 cm-2 was located in the GaN layer at ∼0.8 nm away from the AlN/GaN interface in reasonable agreement with the reported simulations. Electron microscopy confirmed that the Al0.85 In0.15 N layer was uniform and that Al0.85 In0.15 N/AlN and AlN/GaN interfaces were abrupt and well defined.

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U2 - 10.1063/1.3108084

DO - 10.1063/1.3108084

M3 - Article

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SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121909

ER -

Polarization field mapping of Al0.85 In0.15 N/AlN/GaN heterostructure

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