Abstract
Thin films of epitaxial SrTiO 3 grown on silicon exhibit compressive in-plane strain that may stabilize ferroelectricity in this normally non-ferroelectric material. We investigate this possibility by using an ultra-high vacuum atomic force microscope to measure the local force response of coherently strained SrTiO 3 films on silicon to an applied ac electric field. The observed cantilever response is different in regions that were previously written with positive and negative voltages, but the frequency dependence of this response indicates that the dominant forces are related to electrostatic charging rather than ferroelectricity.
Original language | English |
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Article number | 102902 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 10 |
DOIs | |
State | Published - Sep 3 2012 |
Funding
The authors acknowledge support from the NSF under Grant Nos. MRSEC DMR 1119826 and DMR 1006256. The authors thank Z. Zhang for beamline support at the Advanced Photon Source (APS). Work at the APS, beamline 33ID, was supported by the DOE Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, U.S. Department of Energy. We acknowledge Peter Maksymovych and Sergei V. Kalinin from the Center for Nanophase Materials Sciences for discussions and assistance with experiments.
Funders | Funder number |
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DOE Office of Basic Energy Sciences | |
Scientific User Facilities Division | |
National Science Foundation | 1006256 |
U.S. Department of Energy | |
Oak Ridge National Laboratory | |
American Pain Society |