Abstract
Three oxide heterojunctions made of BaTi O3-δ Si have been fabricated under various oxygen pressures by laser molecular beam epitaxy. They all exhibited nonlinear and rectifying I-V characteristics but with a large difference in the rectification behaviors. Their photoelectric properties and dependences on oxygen contents in BaTi O3-δ films have been experimentally studied. We found that the photovoltaic effects depended strongly on the oxygen contents of the BaTi O3-δ films. The possible mechanism was proposed based on the band structure of the p-n heterojunctions.
Original language | English |
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Article number | 071113 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 7 |
DOIs | |
State | Published - 2008 |
Externally published | Yes |