TY - JOUR
T1 - Photosensitivity of B, Si and N implanted silica
AU - Magruder, R. H.
AU - Zuhr, R. A.
AU - Hensley, D. K.
AU - Withrow, S.
PY - 1997/5
Y1 - 1997/5
N2 - Silica was implanted with B and N ions at 4 MeV and Si ions at 5 MeV with nominal doses of 1 × 1016 ions/cm2. The samples were exposed to 245 nm KrF excimer irradiation with a fluence of 150 mJ/cm2 per pulse for pulse totals of 1.5, 15 and 30 J/cm2. The optical absorption from 200 to 450 nm was measured before and after each series of KrF irradiations. Broad peaks at 210 and 245 nm are observed in the absorption spectra. The magnitude of the absorption as well as the photosensitive response is dependent on the implanted ion species. We attribute the differences observed in the absorption of the as implanted samples and their response to KrF irradiation to differences in the ion-solid interactions.
AB - Silica was implanted with B and N ions at 4 MeV and Si ions at 5 MeV with nominal doses of 1 × 1016 ions/cm2. The samples were exposed to 245 nm KrF excimer irradiation with a fluence of 150 mJ/cm2 per pulse for pulse totals of 1.5, 15 and 30 J/cm2. The optical absorption from 200 to 450 nm was measured before and after each series of KrF irradiations. Broad peaks at 210 and 245 nm are observed in the absorption spectra. The magnitude of the absorption as well as the photosensitive response is dependent on the implanted ion species. We attribute the differences observed in the absorption of the as implanted samples and their response to KrF irradiation to differences in the ion-solid interactions.
UR - http://www.scopus.com/inward/record.url?scp=0031547624&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(96)00978-0
DO - 10.1016/S0168-583X(96)00978-0
M3 - Article
AN - SCOPUS:0031547624
SN - 0168-583X
VL - 127-128
SP - 492
EP - 496
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ER -