Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures

Zachariah O. Martin; Alexander Senichev; Samuel Peana; Benjamin J. Lawrie; Alexei S. Lagutchev; Alexandra Boltasseva; Vladimir M. Shalaev

doi:10.1002/qute.202300099

Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures

Zachariah O. Martin
, Alexander Senichev
, Samuel Peana
, Benjamin J. Lawrie
, Alexei S. Lagutchev
, Alexandra Boltasseva
, Vladimir M. Shalaev

Quantum Heterostructures

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A robust process for fabricating intrinsic single-photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent broadening of the zero-phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero-phonon lines with instrument-limited linewidths.

Original language	English
Article number	2300099
Journal	Advanced Quantum Technologies
Volume	6
Issue number	11
DOIs	https://doi.org/10.1002/qute.202300099
State	Published - Nov 2023

Funding

The cryo-optical spectroscopies described here were supported by the US Department of Energy, Office of Science, National Quantum Information Science Research Centers, Quantum Science Center. The sample preparation, material, and optical characterization were supported by National Science Foundation (NSF) grant 2015025-ECCS and Purdue's Elmore ECE Emerging Frontiers Center “The Crossroads of Quantum and AI.” Low-temperature photoluminescence measurements were conducted as part of a user project at the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory. The cryo‐optical spectroscopies described here were supported by the US Department of Energy, Office of Science, National Quantum Information Science Research Centers, Quantum Science Center. The sample preparation, material, and optical characterization were supported by National Science Foundation (NSF) grant 2015025‐ECCS and Purdue's Elmore ECE Emerging Frontiers Center “The Crossroads of Quantum and AI.” Low‐temperature photoluminescence measurements were conducted as part of a user project at the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory.

Keywords

photophysics
quantum photonics
silicon nitride
single-photon emitters

Access to Document

10.1002/qute.202300099

Cite this

@article{1b9f74963ab94396b31d47380ca8e44a,

title = "Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures",

abstract = "A robust process for fabricating intrinsic single-photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent broadening of the zero-phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero-phonon lines with instrument-limited linewidths.",

keywords = "photophysics, quantum photonics, silicon nitride, single-photon emitters",

author = "Martin, \{Zachariah O.\} and Alexander Senichev and Samuel Peana and Lawrie, \{Benjamin J.\} and Lagutchev, \{Alexei S.\} and Alexandra Boltasseva and Shalaev, \{Vladimir M.\}",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors. Advanced Quantum Technologies published by Wiley-VCH GmbH.",

year = "2023",

month = nov,

doi = "10.1002/qute.202300099",

language = "English",

volume = "6",

journal = "Advanced Quantum Technologies",

issn = "2511-9044",

publisher = "wiley",

number = "11",

}

TY - JOUR

T1 - Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures

AU - Martin, Zachariah O.

AU - Senichev, Alexander

AU - Peana, Samuel

AU - Lawrie, Benjamin J.

AU - Lagutchev, Alexei S.

AU - Boltasseva, Alexandra

AU - Shalaev, Vladimir M.

PY - 2023/11

Y1 - 2023/11

N2 - A robust process for fabricating intrinsic single-photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent broadening of the zero-phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero-phonon lines with instrument-limited linewidths.

AB - A robust process for fabricating intrinsic single-photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent broadening of the zero-phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero-phonon lines with instrument-limited linewidths.

KW - photophysics

KW - quantum photonics

KW - silicon nitride

KW - single-photon emitters

UR - https://www.scopus.com/pages/publications/85168317185

U2 - 10.1002/qute.202300099

DO - 10.1002/qute.202300099

M3 - Article

AN - SCOPUS:85168317185

SN - 2511-9044

VL - 6

JO - Advanced Quantum Technologies

JF - Advanced Quantum Technologies

IS - 11

M1 - 2300099

ER -

Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this