Abstract
Electrical characteristics of a photonically controlled n-channel Al0.3Ga0.7As/GaAs/In0.13Ga0.87 As double heterostructure pseudomorphic HEMT(PHEMT) is reported. Experimental results show a high optical sensitivity in the drain saturation current, the transconductance fT, and fmax at the optical power density Popt = 78 mW/cm2. We also proposed a new optoelectronic equivalent circuit model, which has photonically generated gate capacitances (CgS,opt and Cgd,opt) and transconductance (gm,opt), for accurate description of dc and microwave performance of PHEMT's under optical control, and verified the accuracy of the proposed model with measured and extracted scattering parameters from the equivalent photonic microwave model.
Original language | English |
---|---|
Pages (from-to) | 35-37 |
Number of pages | 3 |
Journal | IEEE Microwave and Guided Wave Letters |
Volume | 8 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1998 |
Externally published | Yes |
Keywords
- Equivalent circuit
- HEMT
- Modeling