Photonic microwave characteristics and modeling of an Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterostructure pseudomorphic HEMT

S. H. Song, D. M. Kim, H. J. Kim, S. H. Kim, K. N. Kang, M. I. Nathan

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Electrical characteristics of a photonically controlled n-channel Al0.3Ga0.7As/GaAs/In0.13Ga0.87 As double heterostructure pseudomorphic HEMT(PHEMT) is reported. Experimental results show a high optical sensitivity in the drain saturation current, the transconductance fT, and fmax at the optical power density Popt = 78 mW/cm2. We also proposed a new optoelectronic equivalent circuit model, which has photonically generated gate capacitances (CgS,opt and Cgd,opt) and transconductance (gm,opt), for accurate description of dc and microwave performance of PHEMT's under optical control, and verified the accuracy of the proposed model with measured and extracted scattering parameters from the equivalent photonic microwave model.

Original languageEnglish
Pages (from-to)35-37
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume8
Issue number1
DOIs
StatePublished - Jan 1998
Externally publishedYes

Keywords

  • Equivalent circuit
  • HEMT
  • Modeling

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