Photon-controlled fabrication of amorphous superlattice structures using ArF (193 nm) excimer laser photolysis

D. H. Lowndes; D. B. Geohegan; D. Eres; S. J. Pennycook; D. N. Mashburn; G. E. Jellison

doi:10.1063/1.99732

Photon-controlled fabrication of amorphous superlattice structures using ArF (193 nm) excimer laser photolysis

D. H. Lowndes, D. B. Geohegan, D. Eres, S. J. Pennycook, D. N. Mashburn, G. E. Jellison

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Abstract

Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium, and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5-25 nm) layers and sharp interlayer boundaries can be deposited at substrate temperatures below the pyrolytic threshold, entirely under laser photolytic control.

Original language	English
Pages (from-to)	1868-1870
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	22
DOIs	https://doi.org/10.1063/1.99732
State	Published - 1988

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title = "Photon-controlled fabrication of amorphous superlattice structures using ArF (193 nm) excimer laser photolysis",

abstract = "Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium, and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5-25 nm) layers and sharp interlayer boundaries can be deposited at substrate temperatures below the pyrolytic threshold, entirely under laser photolytic control.",

author = "Lowndes, {D. H.} and Geohegan, {D. B.} and D. Eres and Pennycook, {S. J.} and Mashburn, {D. N.} and Jellison, {G. E.}",

year = "1988",

doi = "10.1063/1.99732",

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volume = "52",

pages = "1868--1870",

journal = "Applied Physics Letters",

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AU - Lowndes, D. H.

AU - Geohegan, D. B.

AU - Eres, D.

AU - Pennycook, S. J.

AU - Mashburn, D. N.

AU - Jellison, G. E.

PY - 1988

Y1 - 1988

N2 - Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium, and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5-25 nm) layers and sharp interlayer boundaries can be deposited at substrate temperatures below the pyrolytic threshold, entirely under laser photolytic control.

AB - Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium, and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having thin (5-25 nm) layers and sharp interlayer boundaries can be deposited at substrate temperatures below the pyrolytic threshold, entirely under laser photolytic control.

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DO - 10.1063/1.99732

M3 - Article

AN - SCOPUS:0011695507

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SP - 1868

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Photon-controlled fabrication of amorphous superlattice structures using ArF (193 nm) excimer laser photolysis

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