Abstract
High-quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.
| Original language | English |
|---|---|
| Pages (from-to) | 747-751 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 32 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 2003 |
| Externally published | Yes |
Funding
The support of this work by the Office of Biological and Physical Research, NASA, is gratefully acknowledged. The authors at Fisk acknowledge the support from NASA through the Fisk Center for Photonic Materials and Devices and from Grant Nos. NCC8-133, NCC8-145, and NCC5-286. We also acknowledge support from the DOE under Contract No. DE-FG08-98NV13407 through the Office of Nuclear Nonproliferation (NA-22) and DOD/BMDO Grant No. DAAD19-02-1-0003.
| Funders | Funder number |
|---|---|
| BMDO | DAAD19-02-1-0003 |
| Fisk Center for Photonic Materials and Devices | NCC8-133, NCC8-145, NCC5-286 |
| Office of Biological and Physical Research | |
| U.S. Department of Defense | |
| U.S. Department of Energy | DE-FG08-98NV13407 |
| National Aeronautics and Space Administration | |
| Office of Defense Nuclear Nonproliferation | NA-22 |
Keywords
- CdTe:Al
- CdTe:In
- CdTe:Sc
- Photoluminescence (PL) spectra
- Physical-vapor transport (PVT)