Photoluminescence of CdTe crystals grown by 'contactless' PVT method

W. Palosz; K. Grasza; P. R. Boyd; Y. Cui; G. Wright; U. N. Roy; A. Burger

doi:10.1117/12.455696

Photoluminescence of CdTe crystals grown by 'contactless' PVT method

W. Palosz
, K. Grasza
, P. R. Boyd
, Y. Cui
, G. Wright
, U. N. Roy
, A. Burger

Research output: Contribution to journal › Conference article › peer-review

Abstract

High quality CdTe crystals with resistivities higher than 10⁸ Ω cm were grown by the 'contactless' PVT technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.

Original language	English
Pages (from-to)	299-304
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4784
DOIs	https://doi.org/10.1117/12.455696
State	Published - Jan 10 2003
Externally published	Yes
Event	X-Ray and Gamma-Ray Detectors and Applications IV 2002 - Seattle, United States Duration: Jul 7 2002 → Jul 11 2002

Funding

The support of this work by the Office of Biological and Physical Research of NASA is greatfully acknowledged.

Keywords

CdTe:Al
CdTe:In
CdTe:Sc
Pl spectra

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10.1117/12.455696

Cite this

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title = "Photoluminescence of CdTe crystals grown by 'contactless' PVT method",

abstract = "High quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the 'contactless' PVT technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.",

keywords = "CdTe:Al, CdTe:In, CdTe:Sc, Pl spectra",

author = "W. Palosz and K. Grasza and Boyd, \{P. R.\} and Y. Cui and G. Wright and Roy, \{U. N.\} and A. Burger",

note = "Publisher Copyright: {\textcopyright} 2002 SPIE.; X-Ray and Gamma-Ray Detectors and Applications IV 2002 ; Conference date: 07-07-2002 Through 11-07-2002",

year = "2003",

month = jan,

day = "10",

doi = "10.1117/12.455696",

language = "English",

volume = "4784",

pages = "299--304",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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}

TY - JOUR

T1 - Photoluminescence of CdTe crystals grown by 'contactless' PVT method

AU - Palosz, W.

AU - Grasza, K.

AU - Boyd, P. R.

AU - Cui, Y.

AU - Wright, G.

AU - Roy, U. N.

AU - Burger, A.

PY - 2003/1/10

Y1 - 2003/1/10

N2 - High quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the 'contactless' PVT technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.

AB - High quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the 'contactless' PVT technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.

KW - CdTe:Al

KW - CdTe:In

KW - CdTe:Sc

KW - Pl spectra

UR - https://www.scopus.com/pages/publications/85076823099

U2 - 10.1117/12.455696

DO - 10.1117/12.455696

M3 - Conference article

AN - SCOPUS:85076823099

SN - 0277-786X

VL - 4784

SP - 299

EP - 304

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - X-Ray and Gamma-Ray Detectors and Applications IV 2002

Y2 - 7 July 2002 through 11 July 2002

ER -

Photoluminescence of CdTe crystals grown by 'contactless' PVT method

Abstract

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Keywords

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