Abstract
Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of Hf0.5Zr0.5O2 thin-films. Modest ( ∼ 2 − 77 pJ / cm 2 ) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTIR measurements showed that the photoinduced oxygen vacancy concentration reduction promoted formation of the ferroelectric phase (space group Pca 2 1 ), resulting in an increase in the piezoelectric response measured by piezoresponse force microscopy. Photoinduced vacancy tailoring provides, therefore, a spatially prescriptive, post-synthesis, and low-entry method to modify phase in HfO2-based materials.
| Original language | English |
|---|---|
| Article number | 062902 |
| Journal | Applied Physics Letters |
| Volume | 124 |
| Issue number | 6 |
| DOIs | |
| State | Published - Feb 5 2024 |
Funding
S.T.J. acknowledges the support from the U.S. National Science Foundation's Graduate Research Fellowship Program under Grant No. DGE-1842490. Optical characterization, electrical characterization, and analysis were supported by the Center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0021118. AFM experiments were conducted as part of a user project at the Center for Nanophase Materials Sciences, which is a U.S. Department of Energy User Facility at Oak Ridge National Laboratory. NanoFTIR was conducted at beamline 2.4 of the Advanced Light Source. This research used resources of the Advanced Light Source, which is a DOE Office of Science User Facility under Contract No. DE-AC02-05CH11231. The authors acknowledge beamline scientists Hans Bechtel and Stephanie Gilbert Corder for their technical assistance in nanoFTIR measurements. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. S.T.J. acknowledges the support from the U.S. National Science Foundation's Graduate Research Fellowship Program under Grant No. DGE-1842490. Optical characterization, electrical characterization, and analysis were supported by the Center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0021118. AFM experiments were conducted as part of a user project at the Center for Nanophase Materials Sciences, which is a U.S. Department of Energy User Facility at Oak Ridge National Laboratory. NanoFTIR was conducted at beamline 2.4 of the Advanced Light Source. This research used resources of the Advanced Light Source, which is a DOE Office of Science User Facility under Contract No. DE-AC02-05CH11231. The authors acknowledge beamline scientists Hans Bechtel and Stephanie Gilbert Corder for their technical assistance in nanoFTIR measurements. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.