Photoemission extended fine structure study of the SiO2/Si(111) interface

M. T. Sieger; D. A. Luh; T. Miller; T. C. Chiang

doi:10.1103/PhysRevLett.77.2758

Photoemission extended fine structure study of the SiO₂/Si(111) interface

M. T. Sieger, D. A. Luh, T. Miller, T. C. Chiang

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60 Scopus citations

Abstract

High-resolution Si 2p core level photoemission spectra of the SiO₂/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt.

Original language	English
Pages (from-to)	2758-2761
Number of pages	4
Journal	Physical Review Letters
Volume	77
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.77.2758
State	Published - 1996
Externally published	Yes

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10.1103/PhysRevLett.77.2758

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@article{524ea89623f14c0badfa3668b9e96a3f,

title = "Photoemission extended fine structure study of the SiO2/Si(111) interface",

abstract = "High-resolution Si 2p core level photoemission spectra of the SiO2/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt.",

author = "Sieger, {M. T.} and Luh, {D. A.} and T. Miller and Chiang, {T. C.}",

year = "1996",

doi = "10.1103/PhysRevLett.77.2758",

language = "English",

volume = "77",

pages = "2758--2761",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "13",

}

TY - JOUR

T1 - Photoemission extended fine structure study of the SiO2/Si(111) interface

AU - Sieger, M. T.

AU - Luh, D. A.

AU - Miller, T.

AU - Chiang, T. C.

PY - 1996

Y1 - 1996

N2 - High-resolution Si 2p core level photoemission spectra of the SiO2/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt.

AB - High-resolution Si 2p core level photoemission spectra of the SiO2/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt.

UR - http://www.scopus.com/inward/record.url?scp=0000258412&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.77.2758

DO - 10.1103/PhysRevLett.77.2758

M3 - Article

AN - SCOPUS:0000258412

SN - 0031-9007

VL - 77

SP - 2758

EP - 2761

JO - Physical Review Letters

JF - Physical Review Letters

IS - 13

ER -

Photoemission extended fine structure study of the SiO₂/Si(111) interface

Abstract

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